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BUK6E2R3-40C Datasheet(PDF) 8 Page - NXP Semiconductors |
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BUK6E2R3-40C Datasheet(HTML) 8 Page - NXP Semiconductors |
8 / 15 page BUK6E2R3-40C All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 — 18 August 2010 8 of 15 NXP Semiconductors BUK6E2R3-40C N-channel TrenchMOS intermediate level FET Fig 9. Sub-threshold drain current as a function of gate-source voltage Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Normalized drain-source on-state resistance factor as a function of junction temperature Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003aad806 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 01 23 4 VGS (V) ID (A) max typ min 003aae542 0 1 2 3 4 -60 0 60 120 180 Tj ( °C) VGS(th) (V) max @1mA typ @1mA min @2.5mA 003aad793 0 0.5 1 1.5 2 2.5 -60 0 60 120 180 Tj ( °C) a 003aae283 0 2 4 6 8 0 1020 3040 50 ID (A) RDSon (m Ω) 10 3.6 3.4 3.8 VGS (V) = 3.3 5.0 4.0 |
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