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TK80F08K3 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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TK80F08K3 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TK80F08K3 2010-02-02 4 VGS = 10 V 1 10 1000 1 100 100 10 8 12 16 20 0 0.4 0.6 0.8 1 0.2 04 ID = 80 A 20 40 4 8 0 80 160 200 40 0 2 10 6 Tc = −55°C 100 25 120 46 8 10 0 100 200 250 300 50 02 VGS = 4 V 4.2 4.4 4.6 5 8 10 5.2 0 10 20 30 40 50 0.4 0.6 0.8 1.0 0 0.2 4.8 5.5 6 VGS = 4 V 4.2 4.4 4.6 5 8 10 5.2 4.8 5.5 6 150 Gate-source voltage VGS (V) VDS – VGS Common source Tc = 25℃ Pulse test Drain current ID (A) RDS (ON) – ID Common source Tc = 25℃ Pulse test Drain-source voltage VDS (V) ID – VDS Common source Tc = 25℃ Pulse test Drain-source voltage VDS (V) ID – VDS Common source Tc = 25℃ Pulse test Gate-source voltage VGS (V) ID – VGS Common source VDS = 10 V Pulse test |
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