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TK80F08K3 Datasheet(PDF) 6 Page - Toshiba Semiconductor |
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TK80F08K3 Datasheet(HTML) 6 Page - Toshiba Semiconductor |
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6 / 7 page  TK80F08K3 2010-02-02 6 100 μs * 1 ms * 1000 0.1 10 0.1 1 100 0.01 100 10 VDSS max 1 1000 10μ 100μ 1m 10m 100m 1 10 0.1 1 10 Duty=0.5 0.2 0.1 0.05 0.02 0.01 PDM Duty = t/T Rth (ch-c) = 0.5°C/W T t 0.01 rth − tw Pulse width tw (s) Single Pulse EAS – Tch Channel temperature (initial) Tch (°C) RG = 1 Ω VDD = 25 V, L = 58 μH ⎟ ⎟ ⎠ ⎞ ⎜ ⎜ ⎝ ⎛ − ⋅ ⋅ ⋅ = VDD BVDSS BVDSS 2 I L 2 1 ΕAS Test circuit Waveform IAR BVDSS VDD VDS 0 V 20 V Safe operating area Drain-source voltage VDS (V) ID max (continuous) ID max (pulsed) * DC operation Tc = 25°C *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. E 400 300 200 100 0 25 50 75 100 125 150 500 175 200 |
Similar Part No. - TK80F08K3 |
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Similar Description - TK80F08K3 |
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