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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC1
GND
GND
VCC2
RF IN
GND
GND
PC
GND
GND
GND
RF OUT
RF OUT
GND
GND
GND
BIAS
RF2104
MEDIUM POWER AMPLIFIER
• 900MHz ISM Band Applications
• 400MHz Industrial Radios
• Driver for Higher Power Applications
• Portable Battery-Powered Equipment
• Commercial and Consumer Systems
• Base Station Equipment
The RF2104 is a medium power amplifier IC. The device
is manufactured on a low cost Silicon process, and has
been designed for use as the final RF amplifier in UHF
radio transmitters operating between 400MHz and
1000 MHz. It may also be used as a driver amplifier in
higher power applications. The device is packaged in a
plastic quad-batwing 16-lead package, and is self-con-
tained with the exception of the output matching network,
power supply feed line, and bypass capacitors. It pro-
duces an output power level of up to 500mW (CW) at
3.6V. The device can be used in 3 cell battery applica-
tions. The maximum CW output at 3.6V is +27dBm. The
unit has a total gain of 26dB, depending upon the output
matching network.
• 400MHz to 1000MHz Operation
• Up to 500mW CW Output Power
• 26dB Small Signal Gain
• 40dB Gain Control Range
• Single 2.7V to 3.6V Supply
• 40% Efficiency
RF2104
Medium Power Amplifier
RF2104 PCBA-L
Fully Assembled Evaluation Board (830MHz)
RF2104 PCBA-H Fully Assembled Evaluation Board (915MHz)
2
Rev B4 010507
0.068
0.064
0.008
0.004
-A-
0.020
0.014
0.034 REF
0.068
0.053
0.244
0.229
0.009
0.007
0.034
0.016
8° MAX
0° MIN
0.393
0.386
0.020
REF
0.157
0.150
Package Style: CJ2BAT0
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