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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
VCC2
GND1
PD
RF IN
VCC1
RF OUT
RF OUT
GND2
BIAS
CIRCUITS
RF2127
MEDIUM POWER LINEAR AMPLIFIER
• DECT Cordless Applications
• PCS Communication Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
The RF2127 is a medium-power, high-efficiency, linear
amplifierIC. The deviceis manufacturedonanadvanced
Gallium Arsenide Heterojunction Bipolar Transistor (HBT)
process, and has been designed for use as the final RF
amplifier in 1800MHz digital PCS phone transmitters
requiring
linear
amplification
operating
between
1800 MHz and 1900 MHz, with over 100mW transmitted
power. It will also function as the driver stage for the
RF2125 high power amplifier. A simple power down func-
tion is included for TDD operation.
• Single 3.0V to 6.5V Supply
• 100mW Linear Output Power
• 25dB Small Signal Gain
• 30% Efficiency
• Digitally Controlled Power Down Mode
• 1500MHz to 1900MHz Operation
RF2127
Medium Power Linear Amplifier
RF2127 PCBA
Fully Assembled Evaluation Board
2
Rev A3 010720
0.248
0.232
0.200
0.192
0.160
0.152
0.018
0.014
0.050
0.059
0.057
0.010
0.004
-A-
0.0100
0.0076
0.0500
0.0164
8° MAX
0° MIN
NOTES:
1. Shaded lead is pin 1.
2. All dimensions are excluding flash, protrusions or burrs.
3. Lead coplanarity: 0.005 with respect to datum "A".
4. Package surface finish: Matte (Charmilles #24~27).
Package Style: SOIC-8
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