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LMZ12002 Datasheet(PDF) 4 Page - National Semiconductor (TI) |
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LMZ12002 Datasheet(HTML) 4 Page - National Semiconductor (TI) |
4 / 18 page Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. VIN, RON to GND -0.3V to 25V EN, FB, SS to GND -0.3V to 7V Junction Temperature 150°C Storage Temperature Range -65°C to 150°C ESD Susceptibility(Note 2) ±2 kV For soldering specifications: see product folder at www.national.com and www.national.com/ms/MS/MS-SOLDERING.pdf Operating Ratings (Note 1) V IN 4.5V to 20V EN 0V to 6.5V Operation Junction Temperature −40°C to 125°C Electrical Characteristics Limits in standard type are for T J = 25°C only; limits in boldface type apply over the junction temperature (T J) range of -40°C to +125°C. Minimum and Maximum limits are guaranteed through test, design or statistical correlation. Typical values represent the most likely parametric norm at T J = 25°C, and are provided for reference purposes only. Unless otherwise stated the following conditions apply: V IN = 12V, Vout = 1.8V Symbol Parameter Conditions Min (Note 3) Typ (Note 4) Max (Note 3) Units SYSTEM PARAMETERS Enable Control V EN EN threshold trip point V EN rising 1.10 1.18 1.25 V V EN-HYS EN threshold hysteresis V EN falling 90 mV Soft-Start I SS SS source current V SS = 0V 5 8 11 µA I SS-DIS SS discharge current -200 µA Current Limit I CL Current limit threshold d.c. average 2.3 2.6 3.65 A ON/OFF Timer t ON-MIN ON timer minimum pulse width 150 ns t OFF OFF timer pulse width 260 ns Regulation and Over-Voltage Comparator V FB In-regulation feedback voltage V SS >+ 0.8V T J = -40°C to 125°C I O = 2A 0.775 0.795 0.815 V V SS >+ 0.8V T J = 25°C I O = 10 mA 0.784 0.800 0.816 V FB-OV Feedback over-voltage protection threshold 0.92 V I FB Feedback input bias current 5 nA I Q Non Switching Input Current V FB= 0.86V 1 mA I SD Shut Down Quiescent Current V EN= 0V 25 μA Thermal Characteristics T SD Thermal Shutdown Rising 165 °C T SD-HYST Thermal shutdown hysteresis Falling 15 °C θ JA Junction to Ambient 4 layer JEDEC Printed Circuit Board, 100 vias, No air flow 19.3 °C/W 2 layer JEDEC Printed Circuit Board, No air flow 21.5 °C/W θ JC Junction to Case No air flow 1.9 °C/W PERFORMANCE PARAMETERS ΔV O Output Voltage Ripple 8 mV PP ΔV O/ΔVIN Line Regulation V IN = 8V to 20V, IO= 2A .01 % ΔV O/ΔVIN Load Regulation V IN = 12V 1.5 mV/A www.national.com 4 |
Similar Part No. - LMZ12002_1 |
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