SSTV16859DGG datasheet(7/14 Pages) PHILIPS

Part #	SSTV16859DGG

Description	2.5 V 13-bit to 26-bit SSTL_2 registered buffer for stacked DDR DIMM

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Manufacturer	PHILIPS [NXP Semiconductors]

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Philips Semiconductors

Product data

SSTV16859

2.5 V 13-bit to 26-bit SSTL_2

registered buffer for stacked DDR DIMM

2002 Feb 19

7

DC ELECTRICAL CHARACTERISTICS

Over recommended operating conditions. Voltages are referenced to GND (ground = 0 V).

LIMITS

SYMBOL

PARAMETER

TEST CONDITIONS

Tamb = 0 to +70 °C

UNIT

MIN

TYP

MAX

VIK

II = –18 mA, VDD = 2.3 V

—

–1.2

V

VO

IOH = –100 µA, VDD = 2.3 to 2.7 V

VDD – 0.2

—

V

VOH

IOH = –16 mA, VDD = 2.3 V

1.95

—

V

VO

IOL = 100 µA, VDD = 2.3 to 2.7 V

—

0.2

V

VOL

IOL = 16 mA, VDD = 2.3 V

—

0.35

V

II

All inputs

VI = VDD or GND, VDD = 2.7 V

—

±5

µA

Static standby

RESET = GND

—

0.01

IDD

Static operating

RESET = VDD, VI = VIH(AC) or

VIL(AC)

IO = 0, VDD = 2.7 V

—

45

mA

Dynamic operating –

clock only

RESET = VDD, VI = VIH(AC) or

VIL(AC), CK and CK switching

50% duty cycle.

90

—

µA/ clock MHz

IDDD

Dynamic operating –

per each data input

RESET = VDD, VI = VIH(AC) or

VIL(AC), CK and CK switching

50% duty cycle. One data input

switching at half clock frequency,

50% duty cycle.

IO = 0, VDD = 2.7 V

20

—

µA/ clock MHz/

data input

rOH

Output high

IOH = –20 mA, VDD = 2.3 to 2.7 V

7

—

20

Ω

rOL

Output low

IOL = 20 mA, VDD = 2.3 to 2.7 V

7

—

20

Ω

rO(∆)

|rOH – rOL|

each separate bit

IO = 20 mA, Tamb = 25°C, VDD = 2.5 V

—

4

Ω

Data inputs

VI = VREF ± 310 mV, VDD = 2.5 V

2.5

2.74

3.5

Ci

CK and CK

VICR = 1.25 V, VI(PP) = 360 mV, VDD = 2.5 V

2.5

3.15

3.5

pF

RESET

VI = VDD or GND, VDD = 2.5 V

—

2.27

—

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