Preliminary
2-270
RF3117
Rev A0 011016
2
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
VDC
Supply Voltage (POUT≤31dBm)
+5.2
VDC
Control Voltage (VREG)+4.2
VDC
Input RF Power
+10
dBm
Mode Voltage (VMODE)+3.5
VDC
Operating Case Temperature
-30 to +110
°C
Storage Temperature
-30 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
High Power State
(VMODE Low)
Typical Performance at VCC=3.2V,
VREG=3V, TAMB=25°C,
Frequency= 824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Linear Gain
27
30
dB
Second Harmonic
-35
dBc
Third Harmonic
-40
dBc
Maximum Linear Output Power
(CDMA Modulation)
29
30
dBm
Total Linear Efficiency
33
%
VCC=3.2V, POUT=29dBm
(room temperature)
Adjacent Channel Power
Rejection
-46.5
-45.0
dBc
ACPR @885kHz, POUT=Max POUT
-59
-57
dBc
ACPR @1980kHz, POUT=Max POUT
Input VSWR
1.8:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
Noise Power
-135
dBm/Hz
At 45MHz offset.
Low Power State
(VMODE High)
Typical Performance at VCC=3.2V,
VREG=3V, TAMB=25°C,
Frequency= 824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Linear Gain
17.5
21
dB
Second Harmonic
-35
dBc
Third Harmonic
-40
dBc
Maximum Linear Output Power
(CDMA Modulation)
16
20
dBm
Adjacent Channel Power
Rejection
-52
-44
dBc
ACPR @885kHz, POUT=Max POUT
-62
-55
dBc
ACPR @1980kHz, POUT=Max POUT
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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