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Memory ICs

4,096-Bit Serial Electrically Erasable PROM

BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV

• Low power CMOS Technology

• 256

× 16 bit configuration

• 2.7V to 5.5V operation

• Low power dissipation

– 3mA (max.) active current: 5V

– 5

µA (max.) standby current: 5V

• Auto increment for efficient data bump

• Automatic erase-before-write

• Hardware and software write protection

– Default to write-disable state at power up

– Software instructions for write-enable / disable

– Vcc lockout inadvertent write protection

• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages

• Device status signal during write cycle

• TTL compatible Input / Output

• 100,000 ERASE / write cycles

• 10 years Data Retention

1

2

3

4

8

7

6

5

CS

SK

DI

DO

N.C.

N.C.

GND

BR93LC66 /

BR93LC66RF

1

2

3

4

8

7

6

5

NC

CS

SK

N.C.

GND

DO

DI

BR93LC66F /

BR93LC66FV

CS

SK

DI

DO

GND

N.C.

N.C.

Function

Chip select input

Serial clock input

Start bit, operating code, address, and serial

data input

Serial data output, READY / BUSY internal

status display output

Ground

Not connected

Not connected

Power supply

Pin

Name

The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed

electrically. Each is configured of 256 words

× 16 bits (4096 bits), and each word can be accessed individually and

data read from it and written to it.

Operation control is performed using five types of commands. The commands, addresses, and data are input

through the DI pin under the control of the CS and SK pins. In a write operation, the internal status signal (READY or

BUSY) can be output from the DO pin.