IMT17

Transistors

Rev.A

1/2

General purpose transistor

(isolated dual transistors)

IMT17

Applications

External dimensions (Unit : mm)

General purpose small signal amplifier

Features

1) Two 2SA1036K chips in an SMT package.

2) Same size as SMT3 package, so same mounting

machine can be used for both.

3) Transistor elements are independent, eliminating

interference.

−500mA

5) Mounting cost, and area, are reduced by one half.

ROHM : SMT6

EIAJ : SC-74

(4)

(5)

(6)

(3)

(2)

(1)

(1)

(2)

(3)

0.3 +

0.1

−0.05

(6)

(5)

(4)

0.95 0.95

1.9

2.9

1.1+0.2

0.8

−0.1

0 to 0.1

0.15−0.06

+0.1

Abbreviated symbol: T17

All terminals have same dimensions

Structure

Packaging specifications

Epitaxial planar type

Packaging type

Taping

Code

IMT17

Part No.

T110

3000

Basic ordering unit (pieces)

PNP silicon transistor

Absolute maximum ratings (Ta=25

°C)

Parameter

Symbol

Limits

Unit

−60

V

−50

V

−5V

−500

mA

Tj

150

°C

Tstg

−55 to +150

°C

Pd

300(TOTAL)

mW

∗

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Junction temperature

Storage temperature

Power dissipation

Electrical characteristics(Ta=25

°C)

Parameter

Symbol

Cob

Min.

−60

−50

−5

−

−

120

−

−

−

−

−

−

−

−

−

−

200

7

−

−

−

−0.1

−0.1

390

−0.6

−

−

= −100µA

= −1mA

= −100µA

V

= −30V

V

= −4V

∗

= −500mA/ −50mA

V

V

µA

µA

−

V

MHz

pF

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Collector-emitter saturation voltage

Transition frequency

Output capacitance