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DDRSDRAM Datasheet(PDF) 8 Page - Samsung semiconductor |
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DDRSDRAM Datasheet(HTML) 8 Page - Samsung semiconductor |
8 / 49 page - 8 of 63 - REV. 0.61 August 9. '99 128Mb DDR SDRAM Target • 0 Mixed Interface(LVTTL & SSTL_3 & 3.3V VDDQ) • 1 SSTL_2(2.5V VDDQ) • T 66pin TSOP-II • B BGA • C u - BGA(CSP) • Z 7.5ns, 133MHz@CL2 (266Mbps/pin) • Y 7.5ns, 133MHz@CL2.5(266Mbps/pin) • 0 10ns, 100MHz @CL2(200Mbps/pin) • Blank 1st Gen. • A 2nd Gen. • B 3rd Gen. • C 4th Gen. • 4 4M • 8 8M • 16 16M • 32 32M • 64 64M • 12 128M • 25 256M • 51 512M • 1G 1G • 2G 2G • 4G 4G • H DDR SDRAM(3.3V VDD) • L DDR SDRAM(2.5V VDD) • 4 x4 • 8 x8 • 16 x16 • 32 x32 • G Auto & Self Refresh • F Auto & Self Refresh with Low Power • 3 4 Banks • 4 8 Banks • 4 DRAM DDR SDRAM ORDERING INFORMATION KM 4 XX L XX X X X X X - X X 1. SAMSUNG Memory 2. Device 3. Organization 4. Product & Voltage(VDD) 12. Speed 11. Power 10. Package Type 9. Revision 5. Depth 8. Interface & Voltage(VDDQ) 7. Number of Bank 1. SAMSUNG Memory 2. Device 3. Organization 4. Product & Voltage(VDD) 5. Depth 7. Number of Bank 8. Interface & Voltage(VDDQ) 9. Revision 10. Package Type 11. Power 12. Speed 6. Refresh • 0 64m/4K(15.6us) • 1 32m/2K(15.6us) • 2 128m/8K(15.6us) • 3 64m/8K(7.8us) • 4 128m/16K(7.8us) 6. Refresh |
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Similar Description - DDRSDRAM |
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