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K4D263238D-QC50 Datasheet(PDF) 11 Page - Samsung semiconductor

Part # K4D263238D-QC50
Description  1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4D263238D-QC50 Datasheet(HTML) 11 Page - Samsung semiconductor

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128M DDR SDRAM
K4D263238D
-11 -
Rev. 1.3 (Jul. 2002)
DC CHARACTERISTICS
Note: 1. Measured with outputs open.
2. Refresh period is 32ms.
Parameter
Symbol
Test Condition
Version
Unit
Note
-40
-50
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2
tRC
tRC(min)
IOL=0mA, tCC= tCC(min)
245
215
mA
1
Precharge Standby Current
in Power-down mode
ICC2P
CKE
≤ VIL(max), tCC= tCC(min)
70
60
mA
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min).
100
90
mA
Active Standby Current
power-down mode
ICC3P
CKE
≤ VIL(max), tCC= tCC(min)
100
80
mA
Active Standby Current in
in Non Power-down mode
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min) .
175
150
mA
Operating Current
( Burst Mode)
ICC4
IOL=0mA ,
tCC= tCC(min), Page
Burst, All Banks activated.
630
530
mA
Refresh Current
ICC5
tRC
tRFC(min)
250
230
mA
2
Self Refresh Current
ICC6
CKE
≤ 0.2V
3
mA
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65
°C)
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD/VDDQ=2.5V+ 5%, TA=0 to 65
°C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Input High (Logic 1) Voltage; DQ
VIH
VREF+0.35
-
-
V
Input Low (Logic 0) Voltage; DQ
VIL
--
VREF-0.35
V
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VDDQ+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
2
1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
Note :


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