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K4E170812D Datasheet(PDF) 6 Page - Samsung semiconductor |
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K4E170812D Datasheet(HTML) 6 Page - Samsung semiconductor |
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6 / 21 page  K4E170811D, K4E160811D CMOS DRAM K4E170812D, K4E160812D AC CHARACTERISTICS (Continued) Parameter Symbol -50 -60 Units Notes Min Max Min Max Data set-up time tDS 0 0 ns 9 Data hold time tDH 8 10 ns 9 Refresh period (2K, Normal) tREF 32 32 ms Refresh period (4K, Normal) tREF 64 64 ms Refresh period (L-ver) tREF 128 128 ms Write command set-up time tWCS 0 0 ns 7 CAS to W delay time tCWD 30 34 ns 7 RAS to W delay time tRWD 67 79 ns 7 Column address to W delay time tAWD 42 49 ns 7 CAS precharge to W delay time tCPWD 47 54 ns CAS set-up time (CAS -before-RAS refresh) tCSR 5 5 ns CAS hold time (CAS -before-RAS refresh) tCHR 10 10 ns RAS to CAS precharge time tRPC 5 5 ns Access time from CAS precharge tCPA 28 35 ns 3 Hyper Page cycle time tHPC 20 25 ns 13 Hyper Page read-modify-write cycle time tHPRWC 47 56 ns 13 CAS precharge time (Hyper Page cycle) tCP 8 10 ns RAS pulse width (Hyper Page cycle) tRASP 50 200K 60 200K ns RAS hold time from CAS precharge tRHCP 30 35 ns OE access time tOEA 13 15 ns OE to data delay tOED 13 15 ns Output buffer turn off delay time from OE tOEZ 3 13 3 15 ns 6 OE command hold time tOEH 13 15 ns Write command set-up time (Test mode in) tWTS 10 10 ns 11 Write command hold time (Test mode in) tWTH 10 10 ns 11 W to RAS precharge time(C-B-R refresh) tWRP 10 10 ns W to RAS hold time(C-B-R refresh) tWRH 10 10 ns Output data hold time tDOH 5 5 ns Output buffer turn off delay from RAS tREZ 3 13 3 15 ns 6,14 Output buffer turn off delay from W tWEZ 3 13 3 15 ns 6 W to data delay tWED 15 15 ns OE to CAS hold time tOCH 5 5 ns CAS hold time to OE tCHO 5 5 ns OE precharge time tOEP 5 5 ns W pulse width (Hyper Page Cycle) tWPE 5 5 ns RAS pulse width (C-B-R self refresh) tRASS 100 100 us 15,16,17 RAS precharge time (C-B-R self refresh) tRPS 90 110 ns 15,16,17 CAS hold time (C-B-R self refresh) tCHS -50 -50 ns 15,16,17 |
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