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K4F160411D Datasheet(PDF) 4 Page - Samsung semiconductor |
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K4F160411D Datasheet(HTML) 4 Page - Samsung semiconductor |
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4 / 20 page  K4F170411D, K4F160411D CMOS DRAM K4F170412D, K4F160412D *Note : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one fast page mode cycle time, tPC. DC AND OPERATING CHARACTERISTICS (Continued) ICC1* : Operating Current (RAS and CAS, Address cycling @tRC=min.) ICC2 : Standby Current (RAS=CAS=W=VIH) ICC3* : RAS-only Refresh Current (CAS=VIH, RAS, Address cycling @tRC=min.) ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.) ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V) ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.) ICC7 : Battery back-up current, Average power supply current, Battery back-up mode Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V, DQ=Don ′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver), TRAS=TRASmin~300ns ICCS : Self Refresh Current RAS=CAS=0.2V, W=OE=A0 ~ A11=VCC-0.2V or 0.2V, DQ0 ~ DQ3=VCC-0.2V, 0.2V or Open Symbol Power Speed Max Units K4F170412D K4F160412D K4F170411D K4F160411D ICC1 Don ′t care -50 -60 90 80 110 100 90 80 110 100 mA mA ICC2 Normal L Don ′t care 1 1 1 1 2 1 2 1 mA mA ICC3 Don ′t care -50 -60 90 80 110 100 90 80 110 100 mA mA ICC4 Don ′t care -50 -60 80 70 90 80 80 70 90 80 mA mA ICC5 Normal L Don ′t care 0.5 200 0.5 200 1 250 1 250 mA uA ICC6 Don ′t care -50 -60 90 80 110 100 90 80 110 100 mA mA ICC7 L Don ′t care 250 250 300 300 uA ICCS L Don ′t care 200 200 250 250 uA |
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