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K4F160812D Datasheet(PDF) 7 Page - Samsung semiconductor

Part # K4F160812D
Description  2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4F160812D Datasheet(HTML) 7 Page - Samsung semiconductor

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K4F170811D, K4F160811D
CMOS DRAM
K4F170812D, K4F160812D
TEST MODE CYCLE
Parameter
Symbol
-50
-60
Units
Notes
Min
Max
Min
Max
Random read or write cycle time
tRC
95
115
ns
Read-modify-write cycle time
tRWC
138
160
ns
Access time from RAS
tRAC
55
65
ns
3,4,10,12
Access time from CAS
tCAC
18
20
ns
3,4,5,12
Access time from column address
tAA
30
35
ns
3,10,12
RAS pulse width
tRAS
55
10K
65
10K
ns
CAS pulse width
tCAS
18
10K
20
10K
ns
RAS hold time
tRSH
18
20
ns
CAS hold time
tCSH
55
65
ns
Column address to RAS lead time
tRAL
30
35
ns
CAS to W delay time
tCWD
41
45
ns
7
RAS to W delay time
tRWD
78
90
ns
7
Column address to W delay time
tAWD
53
60
ns
7
CAS precharge to W delay time
tCPWD
58
65
ns
Fast Page cycle time
tPC
40
45
ns
Fast Page read-modify-write cycle time
tPRWC
81
90
ns
RAS pulse width (Fast Page cycle)
tRASP
55
200K
65
200K
ns
Access time from CAS precharge
tCPA
35
40
ns
3
OE access time
tOEA
18
20
ns
OE to data delay
tOED
18
20
ns
OE command hold time
tOEH
18
20
ns
( Note 11 )


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