Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

K4R441869A-NMCG6 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K4R441869A-NMCG6
Description  256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Download  64 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4R441869A-NMCG6 Datasheet(HTML) 3 Page - Samsung semiconductor

  K4R441869A-NMCG6 Datasheet HTML 1Page - Samsung semiconductor K4R441869A-NMCG6 Datasheet HTML 2Page - Samsung semiconductor K4R441869A-NMCG6 Datasheet HTML 3Page - Samsung semiconductor K4R441869A-NMCG6 Datasheet HTML 4Page - Samsung semiconductor K4R441869A-NMCG6 Datasheet HTML 5Page - Samsung semiconductor K4R441869A-NMCG6 Datasheet HTML 6Page - Samsung semiconductor K4R441869A-NMCG6 Datasheet HTML 7Page - Samsung semiconductor K4R441869A-NMCG6 Datasheet HTML 8Page - Samsung semiconductor K4R441869A-NMCG6 Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 3 / 64 page
background image
Page 1
K4R271669A/K4R441869A
Direct RDRAM
Rev. 1.02 Jan. 2000
Overview
The Rambus Direct RDRAM™ is a general purpose high-
performance memory device suitable for use in a broad
range of applications including computer memory, graphics,
video, and any other application where high bandwidth and
low latency are required.
The 128/144Mbit Direct Rambus DRAMs (RDRAM®) are
extremely high-speed CMOS DRAMs organized as 8M
words by 16 or 18 bits. The use of Rambus Signaling Level
(RSL) technology permits 600MHz to 800MHz transfer
rates while using conventional system and board design
technologies. Direct RDRAM devices are capable of
sustained data transfers at 1.25 ns per two bytes (10ns per
sixteen bytes).
The architecture of the Direct RDRAMs allows the highest
sustained bandwidth for multiple, simultaneous randomly
addressed memory transactions. The separate control and
data buses with independent row and column control yield
over 95% bus efficiency. The Direct RDRAM's thirty-two
banks support up to four simultaneous transactions.
System oriented features for mobile, graphics and large
memory systems include power management, byte masking,
and x18 organization. The two data bits in the x18 organiza-
tion are general and can be used for additional storage and
bandwidth or for error correction.
Features
Highest sustained bandwidth per DRAM device
- 1.6GB/s sustained data transfer rate
- Separate control and data buses for maximized
efficiency
- Separate row and column control buses for
easy scheduling and highest performance
- 32 banks: four transactions can take place simul-
taneously at full bandwidth data rates
Low latency features
- Write buffer to reduce read latency
- 3 precharge mechanisms for controller flexibility
- Interleaved transactions
Advanced power management:
- Direct RDRAM operates from a 2.5 volt supply
- Multiple low power states allows flexibility in power
consumption versus time to transition to active state
- Power-down self-refresh
Organization: 1Kbyte pages and 32 banks, x 16/18
- x18 organization allows ECC configurations or
increased storage/bandwidth
- x16 organization for low cost applications
Uses Rambus Signaling Level (RSL) for up to 800MHz
operation
The 128/144Mbit Direct RDRAMs are offered in a CSP
horizontal package suitable for desktop as well as low-
profile add-in card and mobile applications.
Key Timing Parameters/Part Numbers
a.The “32s"designation indicates that this RDRAM core is composed of 32
banks which use a "split" bank architecture.
b.The “N“ designator indicates the normal package and the “M“ indicates the
mirrored package.
c.The “C“ designator indicates that this RDRAM core uses Normal Power
Self Refresh.
Figure 1: Direct RDRAM CSP Package
Organization
Speed
Part Number
Bin
I/O
Freq.
MHz
tRAC (Row
Access
Time) ns
256Kx16x32sa
-CG6
600
53.3
K4R271669A-Nb(M)CcG6
-CK7
711
45
K4R271669A-N(M)CK7
-CK8
800
45
K4R271669A-N(M)CK8
256Kx18x32s
-CG6
600
53.3
K4R441869A-N(M)CG6
-CK7
711
45
K4R441869A-N(M)CK7
-CK8
800
45
K4R441869A-N(M)CK8
a. Normal Package
b. Mirrored Package
K4Rxxxx69A-Nxxx
SAMSUNG
001
M
K4Rxxxx69A-Mxxx
SAMSUNG
001


Similar Part No. - K4R441869A-NMCG6

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K4R441869B-MCG6 SAMSUNG-K4R441869B-MCG6 Datasheet
306Kb / 20P
   256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-MCK7 SAMSUNG-K4R441869B-MCK7 Datasheet
306Kb / 20P
   256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-MCK8 SAMSUNG-K4R441869B-MCK8 Datasheet
306Kb / 20P
   256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-NCG6 SAMSUNG-K4R441869B-NCG6 Datasheet
306Kb / 20P
   256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R441869B-NCK7 SAMSUNG-K4R441869B-NCK7 Datasheet
306Kb / 20P
   256K x 16/18 bit x 32s banks Direct RDRAMTM
More results

Similar Description - K4R441869A-NMCG6

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
KM416RD8AC SAMSUNG-KM416RD8AC Datasheet
3Mb / 64P
   128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
K4R271669B SAMSUNG-K4R271669B Datasheet
306Kb / 20P
   256K x 16/18 bit x 32s banks Direct RDRAMTM
K4R881869M SAMSUNG-K4R881869M Datasheet
3Mb / 64P
   288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
KM416RD8AS SAMSUNG-KM416RD8AS Datasheet
3Mb / 64P
   128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
logo
Integrated Circuit Solu...
IC42S16101 ICSI-IC42S16101 Datasheet
759Kb / 78P
   512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
IC42S16102 ICSI-IC42S16102 Datasheet
764Kb / 78P
   512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
logo
Winbond
W981616AH WINBOND-W981616AH Datasheet
1Mb / 40P
   512K x 2 BANKS x 16 BIT SDRAM
logo
Hynix Semiconductor
HY57V161610D HYNIX-HY57V161610D Datasheet
73Kb / 13P
   2 Banks x 512K x 16 Bit Synchronous DRAM
logo
A-Data Technology
ADS4616A4A A-DATA-ADS4616A4A Datasheet
530Kb / 8P
   Synchronous DRAM(512K X 16 Bit X 2 Banks)
Rev 1 December, 2001
logo
AMIC Technology
A43L0616B AMICC-A43L0616B Datasheet
585Kb / 48P
   512K X 16 Bit X 2 Banks Synchronous DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com