K4R881869M-NCK8 datasheet(11/64 Pages) SAMSUNG

Part #	K4R881869M-NCK8

Description	288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM

Download	64 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

Logo

11 / 64 page

Page 9

Direct RDRAM™

K4R881869M

Rev. 0.9 Jan. 2000

Preliminary

Table 8 shows the COP field encoding. The device must be

in the ATTN power state in order to receive COLC packets.

The COLC packet is used primarily to specify RD (read) and

WR (write) commands. Retire operations (moving data from

the write buffer to a sense amp) happen automatically. See

Figure 17 for a more detailed description.

The COLC packet can also specify a PREC command,

which precharges a bank and its associated sense amps. The

RDA/WRA commands are equivalent to combining RD/WR

with a PREC. RLXC (relax) performs a power mode transi-

tion. See “Power State Management” on page 38.

Table 9 shows the COLM and COLX field encodings. The

M bit is asserted to specify a COLM packet with two 8 bit

bytemask fields MA and MB. If the M bit is not asserted, an

COLX is specified. It has device and bank address fields,

and an opcode field. The primary use of the COLX packet is

to permit an independent PREX (precharge) command to be

specified without consuming control bandwidth on the ROW

pins. It is also used for the CAL(calibrate) and SAM

(sample) current control commands (see “Current and

Temperature Control” on page 43, and for the RLXX power

mode command (see “Power State Management” on page

38).

Table 8: COLC Packet Field Encodings

S

DC4.. DC0

(select device)a

COP3..0 Name

Command Description

0

----

-----

-

No operation.

1

/= (DEVID4 ..0)

-----

-

Retire write buffer of this device.

1

== (DEVID4 ..0)

x000b

NOCOP

Retire write buffer of this device.

1

== (DEVID4 ..0)

x001

WR

Retire write buffer of this device, then write column C6..C0 of bank BC4..BC0 to write buffer.

1

== (DEVID4 ..0)

x010

RSRV

Reserved, no operation.

1

== (DEVID4 ..0)

x011

RD

Read column C6..C0 of bank BC4..BC0 of this device.

1

== (DEVID4 ..0)

x100

PREC

Retire write buffer of this device, then precharge bank BC4..BC0 (see Figure 14).

1

== (DEVID4 ..0)

x101

WRA

Same as WR, but precharge bank BC4..BC0 after write buffer (with new data) is retired.

1

== (DEVID4 ..0)

x110

RSRV

Reserved, no operation.

1

== (DEVID4 ..0)

x111

RDA

Same as RD, but precharge bank BC4..BC0 afterward.

1

== (DEVID4 ..0)

1xxx

RLXC

Move this device into the standby (STBY) power state (see Figure 46).

a. “/=” means not equal, “==” means equal.

b. An “x” entry indicates which commands may be combined. For instance, the two commands WR/RLXC may be specified in one COP value (1001).

Table 9: COLM Packet and COLX Packet Field Encodings

M

DX4 .. DX0

(selects device)

XOP4..0

Name

Command Description

1

----

-

MSK

MB/MA bytemasks used by WR/WRA.

0

/= (DEVID4 ..0)

-

No operation.

0

== (DEVID4 ..0)

00000

NOXOP

No operation.

0

== (DEVID4 ..0)

1xxx0a

PREX

Precharge bank BX4..BX0 of this device (see Figure 14).

0

== (DEVID4 ..0)

x10x0

CAL

Calibrate (drive) IOL current for this device (see Figure 51).

0

== (DEVID4 ..0)

x11x0

CAL/SAM

Calibrate (drive) and Sample ( update) IOL current for this device (see Figure 51).

0

== (DEVID4 ..0)

xxx10

RLXX

Move this device into the standby (STBY) power state (see Figure 46).

0

== (DEVID4 ..0)

xxxx1

RSRV

Reserved, no operation.

a. An “x” entry indicates which commands may be combined. For instance, the two commands PREX/RLXX may be specified in one XOP value (10010)

Similar Part No. - K4R881869M-NCK8

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K4R881869D	311Kb / 20P	256/288Mbit RDRAM(D-die)
Samsung semiconductor	K4R881869I-DC	45Kb / 4P	Direct RDRAM Product Guide

More results

Similar Description - K4R881869M-NCK8

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	KM416RD8AC	3Mb / 64P	128/144Mbit RDRAM 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
	K4R271669A	3Mb / 64P	256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
	KM416RD8AS	3Mb / 64P	128Mbit RDRAM 256K x 16 bit x 2*16 Dependent Banks Direct RDRAMTM for Consumer Package
	K4R271669B	306Kb / 20P	256K x 16/18 bit x 32s banks Direct RDRAMTM
	K4R761869A-F	313Kb / 20P	576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
Winbond	W981616AH	1Mb / 40P	512K x 2 BANKS x 16 BIT SDRAM
Integrated Circuit Solu...	IC42S16101	759Kb / 78P	512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
Hynix Semiconductor	HY57V161610D	73Kb / 13P	2 Banks x 512K x 16 Bit Synchronous DRAM
A-Data Technology	ADS4616A4A	530Kb / 8P	Synchronous DRAM(512K X 16 Bit X 2 Banks) Rev 1 December, 2001
AMIC Technology	A43L0616B	585Kb / 48P	512K X 16 Bit X 2 Banks Synchronous DRAM

More results

K4R881869M-NCK8 Datasheet(PDF) 11 Page - Samsung semiconductor

K4R881869M-NCK8 Datasheet(HTML) 11 Page - Samsung semiconductor

Similar Part No. - K4R881869M-NCK8

Similar Description - K4R881869M-NCK8

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64

Datasheet Download

Link URL