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K4S280832M Datasheet(PDF) 7 Page - Samsung semiconductor |
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K4S280832M Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 10 page K4S280832M CMOS SDRAM Rev. 0.0 Aug. 1999 AC CHARACTERISTICS (AC operating conditions unless otherwise noted) Parameter Symbol -80 -1H -1L -10 Unit Note Min Max Min Max Min Max Min Max CLK cycle time CAS latency=3 tCC 8 1000 10 1000 10 1000 10 1000 ns 1 CAS latency=2 12 10 12 13 CLK to valid output delay CAS latency=3 tSAC 6 6 6 7 ns 1,2 CAS latency=2 6 6 7 7 Output data hold time CAS latency=3 tOH 3 3 3 3 ns 2 CAS latency=2 3 3 3 3 CLK high pulse width tCH 3 3 3 3.5 ns 3 CLK low pulse width tCL 3 3 3 3.5 ns 3 Input setup time tSS 2 2 2 2.5 ns 3 Input hold time tSH 1 1 1 1.5 ns 3 CLK to output in Low-Z tSLZ 1 1 1 1 ns 2 CLK to output in Hi-Z CAS latency=3 tSHZ 6 6 6 7 ns CAS latency=2 6 6 7 7 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]ns should be added to the parameter. Notes : DQ BUFFER OUTPUT DRIVE CHARACTERISTICS Parameter Symbol Condition Min Typ Max Unit Notes Output rise time trh Measure in linear region : 1.2V ~ 1.8V 1.37 4.37 Volts/ns 3 Output fall time tfh Measure in linear region : 1.2V ~ 1.8V 1.30 3.8 Volts/ns 3 Output rise time trh Measure in linear region : 1.2V ~ 1.8V 2.8 3.9 5.6 Volts/ns 1,2 Output fall time tfh Measure in linear region : 1.2V ~ 1.8V 2.0 2.9 5.0 Volts/ns 1,2 1. Rise time specification based on 0pF + 50 Ω to VSS, use these values to design to. 2. Fall time specification based on 0pF + 50 Ω to VDD, use these values to design to. 3. Measured into 50pF only, use these values to characterize to. 4. All measurements done with respect to VSS. Notes : |
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