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K4S641632D Datasheet(PDF) 6 Page - Samsung semiconductor

Part # K4S641632D
Description  64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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K4S641632D
Rev. 0.3 June 2000
CMOS SDRAM
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S641632D-TC**
4. K4S641632D-TL**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH/VIL=VDDQ/VSSQ)
Notes :
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C)
Parameter
Symbol
Test Condition
Version
Unit Note
- 55 -60 - 70 - 75 - 80 -1H -1L
Operating current
(One bank active)
ICC1
Burst length = 1
tRC
≥ tRC(min)
IO = 0 mA
150 140 115 110 110 100 100 mA
1
Precharge standby current
in power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 10ns
1
mA
ICC2PS CKE & CLK
≤ VIL(max), tCC = ∞
1
Precharge standby current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
15
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
6
Active standby current in
power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 10ns
3
mA
ICC3PS CKE & CLK
≤ VIL(max), tCC = ∞
3
Active standby current in
non power-down mode
(One bank active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
25
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
15
Operating current
(Burst mode)
ICC4
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
170 160 140 135 130 110 110 mA
1
Refresh current
ICC5
tRC
≥ tRC(min)
170 160 140 135 130 125 125 mA
2
Self refresh current
ICC6
CKE
≤ 0.2V
C
1
mA
3
L
400
uA
4


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