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K4S641632D Datasheet(PDF) 6 Page - Samsung semiconductor |
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K4S641632D Datasheet(HTML) 6 Page - Samsung semiconductor |
6 / 11 page K4S641632D Rev. 0.3 June 2000 CMOS SDRAM 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S641632D-TC** 4. K4S641632D-TL** 5. Unless otherwise noted, input swing IeveI is CMOS(VIH/VIL=VDDQ/VSSQ) Notes : DC CHARACTERISTICS (Recommended operating condition unless otherwise noted, TA = 0 to 70 °C) Parameter Symbol Test Condition Version Unit Note - 55 -60 - 70 - 75 - 80 -1H -1L Operating current (One bank active) ICC1 Burst length = 1 tRC ≥ tRC(min) IO = 0 mA 150 140 115 110 110 100 100 mA 1 Precharge standby current in power-down mode ICC2P CKE ≤ VIL(max), tCC = 10ns 1 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 1 Precharge standby current in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 15 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 6 Active standby current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 10ns 3 mA ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 3 Active standby current in non power-down mode (One bank active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns Input signals are changed one time during 20ns 25 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 15 Operating current (Burst mode) ICC4 IO = 0 mA Page burst 4Banks Activated tCCD = 2CLKs 170 160 140 135 130 110 110 mA 1 Refresh current ICC5 tRC ≥ tRC(min) 170 160 140 135 130 125 125 mA 2 Self refresh current ICC6 CKE ≤ 0.2V C 1 mA 3 L 400 uA 4 |
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