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K4S643232E-TC45 Datasheet(PDF) 7 Page - Samsung semiconductor |
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K4S643232E-TC45 Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 12 page K4S643232E CMOS SDRAM - 7 - Rev. 1.3 (Oct. 2001) (Recommended operating condition unless otherwise noted, TA = 0 to 70 °C, VIH(min)/VIL(max)=2.0V/0.8V) Parameter Symbol Test Condition CAS Latency Speed Unit Note -45 -50 -55 -60 -70 Operating Current (One Bank Active) ICC1 Burst Length =1 tRC ≥ tRC(min), tCC ≥ tCC(min), Io = 0mA 3 180 175 175 170 155 mA 2 2 150 150 150 150 150 Precharge Standby Current in power-down mode ICC2P CKE ≤ VIL(max), tCC = 15ns 3 mA ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 2 Precharge Standby Current in non power-down mode ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns 20 mA ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 10 Active Standby Current in power-down mode ICC3P CKE ≤ VIL(max), tCC = 15ns 7 mA ICC3PS CKE ≤ VIL(max), tCC = ∞ 5 Active Standby Current in non power-down mode (One Bank Active) ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 15ns Input signals are changed one time during 30ns 55 mA ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable 40 Operating Current (Burst Mode) ICC4 Io = 0 mA, Page Burst All bank Activated, tCCD = tCCD(min) 3 200 190 190 180 170 mA 2 2 150 150 150 150 150 Refresh Current ICC5 tRC ≥ tRC(min) 3 195 190 190 185 165 mA 3 2 160 160 160 160 160 Self Refresh Current ICC6 CKE ≤ 0.2V 3 mA 4 450 uA 5 DC CHARACTERISTICS 1. Unless otherwise notes, Input level is CMOS(VIH/VIL=VDDQ/VSSQ) in LVTTL. 2. Measured with outputs open. 3. Refresh period is 64ms. 4. K4S643232E-TC** 5. K4S643232E-TL** Notes : |
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