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K4S643232E-TC45 Datasheet(PDF) 7 Page - Samsung semiconductor

Part # K4S643232E-TC45
Description  2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4S643232E-TC45 Datasheet(HTML) 7 Page - Samsung semiconductor

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K4S643232E
CMOS SDRAM
- 7 -
Rev. 1.3 (Oct. 2001)
(Recommended operating condition unless otherwise noted, TA = 0 to 70
°C, VIH(min)/VIL(max)=2.0V/0.8V)
Parameter
Symbol
Test Condition
CAS
Latency
Speed
Unit Note
-45
-50
-55
-60
-70
Operating Current
(One Bank Active)
ICC1
Burst Length =1
tRC
≥ tRC(min), tCC ≥ tCC(min), Io = 0mA
3
180
175
175
170
155
mA
2
2
150
150
150
150
150
Precharge Standby Current in
power-down mode
ICC2P
CKE
≤ VIL(max), tCC = 15ns
3
mA
ICC2PS
CKE
& CLK ≤ VIL(max), tCC = ∞
2
Precharge Standby Current
in non power-down mode
ICC2N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
20
mA
ICC2NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
10
Active Standby Current
in power-down mode
ICC3P
CKE
≤ VIL(max), tCC = 15ns
7
mA
ICC3PS
CKE
≤ VIL(max), tCC = ∞
5
Active Standby Current
in non power-down mode
(One Bank Active)
ICC3N
CKE
≥ VIH(min), CS ≥ VIH(min), tCC = 15ns
Input signals are changed one time during 30ns
55
mA
ICC3NS
CKE
≥ VIH(min), CLK ≤ VIL(max), tCC = ∞
Input signals are stable
40
Operating Current
(Burst Mode)
ICC4
Io = 0 mA, Page Burst
All bank Activated, tCCD = tCCD(min)
3
200
190
190
180
170
mA
2
2
150
150
150
150
150
Refresh Current
ICC5
tRC
≥ tRC(min)
3
195
190
190
185
165
mA
3
2
160
160
160
160
160
Self Refresh Current
ICC6
CKE
≤ 0.2V
3
mA
4
450
uA
5
DC CHARACTERISTICS
1. Unless otherwise notes, Input level is CMOS(VIH/VIL=VDDQ/VSSQ) in LVTTL.
2. Measured with outputs open.
3. Refresh period is 64ms.
4. K4S643232E-TC**
5. K4S643232E-TL**
Notes :


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