K4S643232E-TC55 datasheet(4/12 Pages) SAMSUNG

Part #	K4S643232E-TC55

Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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4 / 12 page

K4S643232E

CMOS SDRAM

- 4 -

Rev. 1.3 (Oct. 2001)

PIN CONFIGURATION (Top view)

VDD

DQ0

VDDQ

DQ1

DQ2

VSSQ

DQ3

DQ4

VDDQ

DQ5

DQ6

VSSQ

DQ7

N.C

VDD

DQM0

WE

CAS

RAS

CS

N.C

BA0

BA1

A10/AP

A0

A1

A2

DQM2

VDD

N.C

DQ16

VSSQ

DQ17

DQ18

VDDQ

DQ19

DQ20

VSSQ

DQ21

DQ22

VDDQ

DQ23

VDD

1

2

3

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5

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86

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55

54

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51

50

49

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46

45

44

VSS

DQ15

VSSQ

DQ14

DQ13

VDDQ

DQ12

DQ11

VSSQ

DQ10

DQ9

VDDQ

DQ8

N.C

VSS

DQM1

N.C

CLK

CKE

A9

A8

A7

A6

A5

A4

A3

DQM3

VSS

N.C

DQ31

VDDQ

DQ30

DQ29

VSSQ

DQ28

DQ27

VDDQ

DQ26

DQ25

VSSQ

DQ24

VSS

86Pin TSOP (II)

(400mil x 875mil)

(0.5 mm Pin pitch)

Similar Part No. - K4S643232E-TC55

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K4S643232E-TE50	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
	K4S643232E-TE60	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
	K4S643232E-TE70	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
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	K4S643232E-TI60	100Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

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Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	K4S643232E-TI	100Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
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	K4S643232E-	101Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
	K4S643232F-	99Kb / 12P	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V
Taiwan Memory Technolog...	T436432B	707Kb / 72P	2M x 32 SDRAM 512K x 32bit x 4Banks Synchronous DRAM
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K4S643232E-TC55 Datasheet(PDF) 4 Page - Samsung semiconductor

K4S643232E-TC55 Datasheet(HTML) 4 Page - Samsung semiconductor

Similar Part No. - K4S643232E-TC55

Similar Description - K4S643232E-TC55

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