K4S643232E-TC55 datasheet(8/12 Pages) SAMSUNG

Part #	K4S643232E-TC55

Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

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Manufacturer	SAMSUNG [Samsung semiconductor]

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K4S643232E

CMOS SDRAM

- 8 -

Rev. 1.3 (Oct. 2001)

AC OPERATING TEST CONDITIONS (VDD = 3.3V

± 0.3V, TA = 0 to 70°C)

Parameter

Value

Unit

AC input levels (Vih/Vil)

2.4/0.4

V

Input timing measurement reference level

1.4

V

Input rise and fall time

tr/tf = 1/1

ns

Output timing measurement reference level

1.4

V

Output load condition

See Fig. 2

3.3V

1200

Ω

870

Ω

Output

30pF

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

Vtt = 1.4V

50

Ω

Output

30pF

Z0 = 50

Ω

(Fig. 2) AC output load circuit

(Fig. 1) DC output load circuit

1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then

rounding off to the next higher integer. Refer to the following ns-unit based AC table.

Note :

OPERATING AC PARAMETER

(AC operating conditions unless otherwise noted)

Parameter

Symbol

Version

Unit

Note

-45

-50

-55

-60

-70

CAS Latency

CL

3

2

3

2

3

2

3

2

3

2

CLK

CLK cycle time

tCC(min)

4.5

10

5

10

5.5

10

6

10

7

10

ns

Row active to row active delay

tRRD(min)

2

CLK

1

RAS to CAS delay

tRCD(min)

4

2

3

2

3

2

3

2

3

2

CLK

1

Row precharge time

tRP(min)

4

2

3

2

3

2

3

2

3

2

CLK

1

Row active time

tRAS(min)

9

5

8

5

7

5

7

5

7

5

CLK

1

tRAS(max)

100

us

Row cycle time

tRC(min)

13

7

11

7

10

7

10

7

10

7

CLK

1

Last data in to row precharge

tRDL(min)

2

CLK

2

Last data in to new col.address delay

tCDL(min)

1

CLK

2

Last data in to burst stop

tBDL(min)

1

CLK

2

Col. address to col. address delay

tCCD(min)

1

CLK

3

Mode Register Set cycle time

tMRS(min)

2

CLK

Number of valid

output data

CAS Latency=3

2

ea

4

CAS Latency=2

1

1. The VDD condition of K4S643232E-45/50/55/60 is 3.135V ~ 3.6V

Notes :

Similar Part No. - K4S643232E-TC55

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K4S643232E-TC55 Datasheet(PDF) 8 Page - Samsung semiconductor

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