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K6R1008C1A-I12 Datasheet(PDF) 1 Page - Samsung semiconductor

Part # K6R1008C1A-I12
Description  128Kx8 High Speed Static RAM5V Operating, Revolutionary Pin out. Operated at Commercial and Industrial Temperature Ranges.
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R1008C1A-I12 Datasheet(HTML) 1 Page - Samsung semiconductor

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K6R1008C1A-C, K6R1008C1A-I
CMOS SRAM
PRELIMINARY
Rev 4.0
- 1 -
February 1998
Document Title
128Kx8 High Speed Static RAM(5V Operating), Revolutionary Pin out.
Operated at Commercial and Industrial Temperature Ranges.
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
Rev. No.
Rev. 0.0
Rev. 1.0
Rev. 2.0
Rev. 3.0
Rev. 4.0
Remark
Preliminary
Final
Final
Final
Final
History
Initial release with Preliminary.
Release to final Data Sheet.
1.1. Delete Preliminary
Update D.C parameters.
2.1. Update D.C parameters
Add Industrial Temperature Range parts and 300mil-SOJ PKG.
3.1. Add 32-Pin 300mil-SOJ Package.
3.2. Add Industrial Temperature Range parts with the same parame-
ters as Commercial Temperature Range parts.
3.2.1. Add K6R1008C1A parts for Industrial Temperature Range.
3.2.2. Add ordering information.
3.2.3. Add the condition for operating at Industrial Temp. Range.
3.3. Add the test condition for VOH1 with VCC=5V
±5% at 25°C
3.4. Add timing diagram to define tWP as
″(Timing Wave Form of
Write Cycle(CS=Controlled)
4.1. Delete 17ns Part
ITEMS
Previous spec.
(12/15/17/20ns part)
Updated spec.
(12/15/17/20ns part)
ICC
200/190/180/170mA
170/165/165/160mA
ISB
30mA
25mA
ISB1
10mA
8mA
Draft Data
Apr. 22th, 1995
Feb. 29th, 1996
Jul. 16th, 1996
Jun. 2nd, 1997
Feb. 25th, 1998


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