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K6T4008U1C-B Datasheet(PDF) 1 Page - Samsung semiconductor

Part # K6T4008U1C-B
Description  512Kx8 bit Low Power and Low Voltage CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T4008U1C-B Datasheet(HTML) 1 Page - Samsung semiconductor

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K6T4008V1C, K6T4008U1C Family
CMOS SRAM
Revision 1.0
January 1999
1
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.11
1.0
Remark
Advance
Preliminary
Final
History
Initial Draft
Revisied
- Speed bin change
KM68U4000C : 85/100ns
→ 70/85/100ns
- DC Characteristics change
ICC : 5mA at read/write
→ 4mA at read
ICC1 : 3mA
→ 4mA
ICC2 : 35mA
→ 30mA
ISB : 0.5mA
→ 0.3mA
ISB1 : 10
µA → 15µA for commercial parts
- Add 32-TSOP1-0820
Errata correct
- 32-TSOP1-0813 products: T
→ TG
Finalize
Draft Data
January 13, 1998
June 12, 1998
November 7, 1998
January 15, 1999
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.


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