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K9F1608W0A- Datasheet(PDF) 8 Page - Samsung semiconductor |
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K9F1608W0A- Datasheet(HTML) 8 Page - Samsung semiconductor |
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8 / 25 page  K9F1608W0A-TCB0, K9F1608W0A-TIB0 FLASH MEMORY 8 AC Characteristics for Operation NOTE : 1. If CE goes high within 30ns after the rising edge of the last RE, R/B will not return to VOL. 2. The time to Ready depends on the value of the pull-up resistor tied R/B pin. 3. To break the sequential read cycle, CE must be held high for longer time than tCEH. Parameter Symbol Min Max Unit Data Transfer from Cell to Register tR - 10 µs ALE to RE Delay tAR 150 - ns ALE to RE Delay(read ID) tAR1 200 - ns CE to RE Delay( ID read) tCR 200 - ns Ready to RE Low tRR 20 - ns WE High to Busy tWB - 200 ns Read Cycle Time tRC 80 - ns RE Access Time tREA - 45 ns RE High to Output Hi-Z tRHZ 5 20 ns CE High to Output Hi-Z tCHZ - 30 ns RE High Hold Time tREH 20 - ns Output Hi-Z to RE Low tIR 0 - ns Last RE High to Busy(at sequential read) tRB - 200 ns CE High to Ready(in case of interception by CE at read)(1) tCRY - 100+tr(R/B)(2) ns CE High Hold Time(at the last serial read)(3) tCEH 250 - ns RE Low to Status Output tRSTO - 45 ns CE Low to Status Output tCSTO - 55 ns RE High to WE Low tRHW 0 - ns WE High to RE Low tWHR 50 - ns Device Resetting Time(Read/Program/Erase) tRST - 5/10/500 µs AC Timing Characteristics for Command / Address / Data Input Parameter Symbol Min Max Unit CLE Set-up Time tCLS 20 - ns CLE Hold Time tCLH 40 - ns CE Setup Time tCS 20 - ns CE Hold Time tCH 40 - ns WE Pulse Width tWP 40 - ns ALE Setup Time tALS 20 - ns ALE Hold Time tALH 40 - ns Data Setup Time tDS 30 - ns Data Hold Time tDH 20 - ns Write Cycle Time tWC 80 - ns WE High Hold Time tWH 20 - ns |
Similar Part No. - K9F1608W0A- |
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Similar Description - K9F1608W0A- |
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