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K9F1208U0M-YIB0 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # K9F1208U0M-YIB0
Description  64M x 8 Bit NAND Flash Memory
Download  41 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F1208U0M-YIB0 Datasheet(HTML) 3 Page - Samsung semiconductor

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K9F1208U0M-YCB0, K9F1208U0M-YIB0
FLASH MEMORY
3
Revision No
0.5
0.6
0.7
Remark
Preliminary
History
1. Addition of new operation : Multi-Plane Copy-Back Program.
- Multi-Plane Copy-Back Program is extended operation of one-page
Copy-Back program.
=> After successive reading of multiple 528 byte data set at the source
planes, the above data are moved to internal page registers and same
procedure as Multi-Plane Page Programming is executed.
1.Powerup sequence is added
: Recovery time of minimum 1
µs is required before internal circuit gets
ready for any command sequences
2. AC parameter tCLR(CLE to RE Delay, min 50ns) is added.
1. Copy-Back Program(Dummy) is added in Command sets table.
(before revision)
(after revision)
Note 2. Page Program(True) and Copy-Back Program(True) are available on 1 plane
operation.
Page Program(Dummy) and Copy-Back Program(Dummy) are available on
the 2nd,3rd,4th plane of multi plane operation.
Function
1st.
Cycle
2nd.
Cycle
3rd.
Cycle
Page Program (True)
80h
10h
-
Page Program (Dummy)
80h
11h
-
Copy-Back Program(True)
00h
8Ah
10h
Function
1st.
Cycle
2nd.
Cycle
3rd.
Cycle
Page Program (True)(2)
80h
10h
-
Page Program (Dummy)(2)
80h
11h
-
Copy-Back Program(True)(2)
00h
8Ah
10h
Copy-Back Program(Dummy)(2)
03h
8Ah
11h/10h
1
µs
VCC
WP
High
~ 2.5V
~ 2.5V
WE
Draft Date
May. 30th 2001
Jul. 23th 2001
Aug. 23th 2001


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