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K6R1008C1C-P12 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6R1008C1C-P12 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page K6R1008C1C-C/C-L, K6R1008C1C-I/C-P CMOS SRAM PRELIMINARY Revision 3.0 - 1 - September 2001 PRELIMINARY Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. Revision History The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. Rev.No. Rev. 0.0 Rev. 1.0 Rev. 2.0 Rev. 3.0 Remark Preliminary Final Final Final History Initial release with Preliminary. Release to Final Data Sheet. 1.1. Delete Preliminary. 2.2. Added Data Retention Characteristics. Add 10ns part. Delete 20ns speed bin Draft Data Aug. 5. 1998 Mar. 3. 1999 Mar. 3. 2000 Sep. 24. 2001 |
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