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K6T4008C1C-VB55 Datasheet(PDF) 4 Page - Samsung semiconductor

Part # K6T4008C1C-VB55
Description  512Kx8 bit Low Power CMOS Static RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6T4008C1C-VB55 Datasheet(HTML) 4 Page - Samsung semiconductor

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K6T4008C1C Family
CMOS SRAM
Revision 1.0
April 1999
4
RECOMMENDED DC OPERATING CONDITIONS1)
Note:
1. Commercial Product : TA=0 to 70
°C, otherwise specified
Industrial Product : TA=-40 to 85
°C, otherwise specified
2. Overshoot : VCC+3.0V in case of pulse width
≤ 30ns
3. Undershoot : -3.0V in case of pulse width
≤ 30ns
4. Overshoot and undershoot are sampled, not 100% tested.
Item
Symbol
Min
Typ
Max
Unit
Supply voltage
Vcc
4.5
5.0
5.5
V
Ground
Vss
0
0
0
V
Input high voltage
VIH
2.2
-
Vcc+0.52)
V
Input low voltage
VIL
-0.53)
-
0.8
V
CAPACITANCE1) (f=1MHz, TA=25
°C)
1. Capacitance is sampled, not 100% tested
Item
Symbol
Test Condition
Min
Max
Unit
Input capacitance
CIN
VIN=0V
-
8
pF
Input/Output capacitance
CIO
VIO=0V
-
10
pF
DC AND OPERATING CHARACTERISTICS
Item
Symbol
Test Conditions
Min
Typ
Max
Unit
Input leakage current
ILI
VIN=Vss to Vcc
-1
-
1
µA
Output leakage current
ILO
CS=VIH or OE=VIH or WE=VIL, VIO=Vss to Vcc
-1
-
1
µA
Operating power supply current
ICC
IIO=0mA, CS=VIL, VIN=VIL or VIH, Read
-
-
10
mA
Average operating current
ICC1
Cycle time=1
µs, 100% duty, IIO=0mA
CS
≤0.2V, VIN≥0.2V or VIN≥Vcc-0.2V
-
-
8
mA
ICC2
Cycle time=Min, 100% duty, IIO=0mA, CS=VIL, VIN=VIH or VIL
-
-
55
mA
Output low voltage
VOL
IOL=2.1mA
-
-
0.4
V
Output high voltage
VOH
IOH=-1.0mA
2.4
-
-
V
Standby Current(TTL)
ISB
CS=VIH, Other inputs = VIL or VIH
-
-
3
mA
Standby Current(CMOS)
ISB1
CS
≥Vcc-0.2V, Other inputs=0~Vcc
K6T4008C1C-L
-
-
80
µA
K6T4008C1C-B
-
-
20
K6T4008C1C-P
-
-
100
K6T4008C1C-F
-
-
30


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