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K6T4008C1B-MB55 Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6T4008C1B-MB55 Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page K6T4008C1B Family CMOS SRAM Revision 3.0 September 1998 1 Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. Revision No. 0.0 0.1 1.0 2.0 3.0 Remark Advance Preliminary Final Final Final History Initial Draft Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA Finalize - Changed Operating current ICC1 at write : 45mA → 40mA ICC2; 90mA → 80mA - Change test load at 55ns : 100pF → 50pF Revise - Change datasheet format Revise - Industrial product speed bin change:70/100ns → 55/70ns Draft Date December 7, 1996 March 6, 1997 October 9, 1997 February 17, 1998 September 8, 1998 |
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