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K9F2816U0C-DIB0 Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K9F2816U0C-DIB0
Description  16M x 8 Bit , 8M x 16 Bit NAND Flash Memory
Download  33 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F2816U0C-DIB0 Datasheet(HTML) 8 Page - Samsung semiconductor

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K9F2816U0C-YCB0,YIB0
FLASH MEMORY
8
K9F2816U0C-DCB0,DIB0
K9F2808U0C-YCB0,YIB0
K9F2808U0C-DCB0,DIB0
K9F2808Q0C-DCB0,DIB0
K9F2816Q0C-DCB0,DIB0
K9F2808U0C-VCB0,VIB0
256Word
8 Word
Figure 2-2. K9F2816X0C (X16) ARRAY ORGANIZATION
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
I/O8 to 15
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
L*
2nd Cycle
A9
A10
A11
A12
A13
A14
A15
A16
L*
3rd Cycle
A17
A18
A19
A20
A21
A22
A23
L*
L*
Page Register
(=256 Words)
32K Pages
(=1,024 Blocks)
256 Word
16 bit
8 Word
1 Block =32 Pages
= (8K + 256) Word
I/O 0 ~ I/O 15
1 Page = 264 Word
1 Block = 264 Word x 32 Pages
= (8K + 256) Word
1 Device = 264Words x 32Pages x 1024 Blocks
= 132 Mbits
Column Address
Row Address
(Page Address)
Page Register
Figure 1-2. K9F2816X0C (X16) FUNCTIONAL BLOCK DIAGRAM
VCC
X-Buffers
128M + 4M Bit
Command
NAND Flash
ARRAY
(256 + 8)Word x 32768
Y-Gating
Page Register & S/A
I/O Buffers & Latches
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Register
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
VSS
A9 - A23
A0 - A7
Command
CE
RE
WE
WP
I/0 0
I/0 15
VCC/VCCQ
VSS
CLE ALE


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