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K9F1G16Q0M-PIB0 Datasheet(PDF) 8 Page - Samsung semiconductor

Part # K9F1G16Q0M-PIB0
Description  1Gb Gb 1.8V NAND Flash Errata
Download  38 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K9F1G16Q0M-PIB0 Datasheet(HTML) 8 Page - Samsung semiconductor

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FLASH MEMORY
7
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
2K Bytes
64 Bytes
Figure 1-1. K9F1G08X0M (X8) Functional Block Diagram
Figure 2-1. K9F1G08X0M (X8) Array Organization
NOTE : Column Address : Starting Address of the Register.
* L must be set to "Low".
* The device ignores any additional input of address cycles than reguired.
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
1st Cycle
A0
A1
A2
A3
A4
A5
A6
A7
2nd Cycle
A8
A9
A10
A11
*L
*L
*L
*L
3rd Cycle
A12
A13
A14
A15
A16
A17
A18
A19
4th Cycle
A20
A21
A22
A23
A24
A25
A26
A27
VCC
X-Buffers
Command
I/O Buffers & Latches
Latches
& Decoders
Y-Buffers
Latches
& Decoders
Register
Control Logic
& High Voltage
Generator
Global Buffers
Output
Driver
VSS
A12 - A27
A0 - A11
Command
CE
RE
WE
CLE
WP
I/0 0
I/0 7
VCC
VSS
64K Pages
(=1,024 Blocks)
2K Bytes
8 bit
64 Bytes
1 Block = 64 Pages
(128K + 4k) Byte
I/O 0 ~ I/O 7
1 Page = (2K + 64)Bytes
1 Block = (2K + 64)B x 64 Pages
= (128K + 4K) Bytes
1 Device = (2K+64)B x 64Pages x 1024 Blocks
= 1056 Mbits
Row Address
Page Register
ALE PRE
1024M + 32M Bit
NAND Flash
ARRAY
(1024 + 32)Byte x 65536
Y-Gating
Cache Register
Row Address
Column Address
Column Address
Data Register & S/A


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