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K9F1G08U0M-PIB0 Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K9F1G08U0M-PIB0
Description  1Gb Gb 1.8V NAND Flash Errata
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

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FLASH MEMORY
9
SAMSUNG
K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0
K9F1G08U0M-VCB0,VIB0,FCB0,FIB0
Product Introduction
The K9F1GXXX0M is a 1056Mbit(1,107,296,256 bit) memory organized as 65,536 rows(pages) by 2112x8(X8 device) or
1056x16(X16 device) columns. Spare 64(X8) or 32(X16) columns are located from column address of 2048~2111(X8 device) or
1024~1055(X16 device).
A 2112-byte(X8 device) or 1056-word(X16 device) data register and a 2112-byte(X8 device) or 1056-
word(X16 device) cache register are serially connected to each other. Those serially connected registers are connected to memory
cell arrays for accommodating data transfer between the I/O buffers and memory cells during page read and page program opera-
tions. The memory array is made up of 32 cells that are serially connected to form a NAND structure. Each of the 32 cells resides in
a different page. A block consists of the 64 pages formed by two NAND structures, totaling 33792 NAND structures of 32 cells. The
program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory
array consists of 1024 separately erasable 128K-byte(X8 device) or 64K-word(X16 device) blocks. It indicates that the bit by bit
erase operation is prohibited on the K9F1GXXX0M.
The K9F1GXXX0M has addresses multiplexed into 8 I/Os(X16 device case : lower 8 I/Os). This scheme dramatically reduces pin
counts and allows system upgrades to future densities by maintaining consistency in system board design. Command, address and
data are all written through I/O's by bringing WE to low while CE is low. Those are latched on the rising edge of WE. Command Latch
Enable(CLE) and Address Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. Some com-
mands require one bus cycle. For example, Reset Command, Status Read Command, etc require just one cycle bus. Some other
commands, like page read and block erase and page program, require two cycles: one cycle for setup and the other cycle for execu-
tion. The 128M byte(X8 device) or 64M word(X16 device) physical space requires 28(X8) or 27(X16) addresses, thereby requiring
four cycles for addressing: 2 cycles of column address, 2 cycles of row address, in that order. Page Read and Page Program need
the same four address cycles following the required command input. In Block Erase operation, however, only the two row address
cycles are used. Device operations are selected by writing specific commands into the command register. Table 1 defines the spe-
cific commands of the K9F1GXXX0M.
The device provides cache program in a block. It is possible to write data into the cache registers while data stored in data registers
are being programmed into memory cells in cache program mode. The program performace may be dramatically improved by cache
program when there are lots of pages of data to be programmed.
The device embodies power-on auto-read feature which enables serial access of data of the 1st page without command and address
input after power-on.
In addition to the enhanced architecture and interface, the device incorporates copy-back program feature from one page to another
page without need for transporting the data to and from the external buffer memory. Since the time-consuming serial access and
data-input cycles are removed, system performance for solid-state disk application is significantly increased.
Table 1. Command Sets
NOTE : 1. Random Data Input/Output can be executed in a page.
2. Command not specified in command sets table is not permitted to be entered to the device, which can raise erroneous operation.
Function
1st. Cycle
2nd. Cycle
Acceptable Command during Busy
Read
00h
30h
Read for Copy Back
00h
35h
Read ID
90h
-
Reset
FFh
-
O
Page Program
80h
10h
Cache Program
80h
15h
Copy-Back Program
85h
10h
Block Erase
60h
D0h
Random Data Input*
85h
-
Random Data Output*
05h
E0h
Read Status
70h
O
Caution : Any undefined command inputs are prohibited except for above command set of Table 1.


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