FLASH MEMORY

3

SAMSUNG

K9F1G08Q0M-YCB0,YIB0,PCB0,PIB0 K9F1G16Q0M-YCB0,YIB0,PCB0,PIB0

K9F1G08U0M-YCB0,YIB0,PCB0,PIB0 K9F1G16U0M-YCB0,YIB0,PCB0,PIB0

K9F1G08U0M-VCB0,VIB0,FCB0,FIB0

GENERAL DESCRIPTION

FEATURES

• Voltage Supply

-1.8V device(K9F1GXXQ0M): 1.70V~1.95V

-3.3V device(K9F1GXXU0M): 2.7 V ~3.6 V

• Organization

- Memory Cell Array

-X8 device(K9F1G08X0M) : (128M + 4,096K)bit x 8bit

-X16 device(K9F1G16X0M) : (64M + 2,048K)bit x 16bit

- Data Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

- Cache Register

-X8 device(K9F1G08X0M): (2K + 64)bit x8bit

-X16 device(K9F1G16X0M): (1K + 32)bit x16bit

• Automatic Program and Erase

- Page Program

-X8 device(K9F1G08X0M): (2K + 64)Byte

-X16 device(K9F1G16X0M): (1K + 32)Word

- Block Erase

-X8 device(K9F1G08X0M): (128K + 4K)Byte

-X16 device(K9F1G16X0M): (64K + 2K)Word

• Page Read Operation

- Page Size

- X8 device(K9F1G08X0M): 2K-Byte

- X16 device(K9F1G16X0M) : 1K-Word

- Random Read : 25

µs(Max.)

- Serial Access : 50ns(Min.)

128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

• Fast Write Cycle Time

- Program time : 300

µs(Typ.)

- Block Erase Time : 2ms(Typ.)

• Command/Address/Data Multiplexed I/O Port

• Hardware Data Protection

- Program/Erase Lockout During Power Transitions

• Reliable CMOS Floating-Gate Technology

- Endurance : 100K Program/Erase Cycles

- Data Retention : 10 Years

• Command Register Operation

• Cache Program Operation for High Performance Program

• Power-On Auto-Read Operation

• Intelligent Copy-Back Operation

• Unique ID for Copyright Protection

• Package :

- K9F1GXXX0M-YCB0/YIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)

- K9F1G08U0M-VCB0/VIB0

48 - Pin WSOP I (12X17X0.7mm)

- K9F1GXXX0M-PCB0/PIB0

48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package

- K9F1G08U0M-FCB0/FIB0

48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package

* K9F1G08U0M-V,F(WSOPI ) is the same device as

K9F1G08U0M-Y,P(TSOP1) except package type.

Offered in 128Mx8bit or 64Mx16bit, the K9F1GXXX0M is 1G bit with spare 32M bit capacity. Its NAND cell provides the most cost-

effective solution for the solid state mass storage market. A program operation can be performed in typical 300

µs on the 2112-

byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device)

or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for

address and data input/output as well as command input. The on-chip write controller automates all program and erase functions

including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take

advantage of the K9F1GXXX0M

′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with

real time mapping-out algorithm. The K9F1GXXX0M is an optimum solution for large nonvolatile storage applications such as solid

state file storage and other portable applications requiring non-volatility.

PRODUCT LIST

Part Number

Vcc Range

Organization

PKG Type

K9F1G08Q0M-Y,P

1.70 ~ 1.95V

X8

TSOP1

K9F1G16Q0M-Y,P

X16

K9F1G08U0M-Y,P

2.7 ~ 3.6V

X8

K9F1G16U0M-Y,P

X16

K9F1G08U0M-V,F

X8

WSOP1