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KM416V1200C Datasheet(PDF) 5 Page - Samsung semiconductor |
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KM416V1200C Datasheet(HTML) 5 Page - Samsung semiconductor |
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5 / 34 page  KM416C1000C, KM416C1200C CMOS DRAM KM416V1000C, KM416V1200C CAPACITANCE (TA=25 °C, VCC=5V or 3.3V, f=1MHz) Parameter Symbol Min Max Units Input capacitance [A0 ~ A11] CIN1 - 5 pF Input capacitance [RAS, UCAS, LCAS, W, OE] CIN2 - 7 pF Output capacitance [DQ0 - DQ15] CDQ - 7 pF Test condition (5V device) : VCC=5.0V ±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V Parameter Symbol -5 -6 Units Notes Min Max Min Max Random read or write cycle time tRC 90 110 ns Read-modify-write cycle time tRWC 133 155 ns Access time from RAS tRAC 50 60 ns 3,4,10 Access time from CAS tCAC 15 15 ns 3,4,5 Access time from column address tAA 25 30 ns 3,10 CAS to output in Low-Z tCLZ 0 0 ns 3 Output buffer turn-off delay tOFF 0 13 0 15 ns 6 Transition time (rise and fall) tT 3 50 3 50 ns 2 RAS precharge time tRP 30 40 ns RAS pulse width tRAS 50 10K 60 10K ns RAS hold time tRSH 13 15 ns CAS hold time tCSH 50 60 ns CAS pulse width tCAS 13 10K 15 10K ns RAS to CAS delay time tRCD 20 37 20 45 ns 4 RAS to column address delay time tRAD 15 25 15 30 ns 10 CAS to RAS precharge time tCRP 5 5 ns Row address set-up time tASR 0 0 ns Row address hold time tRAH 10 10 ns Column address set-up time tASC 0 0 ns 11 Column address hold time tCAH 10 10 ns 11 Column address to RAS lead time tRAL 25 30 ns Read command set-up time tRCS 0 0 ns Read command hold time referenced to CAS tRCH 0 0 ns 8 Read command hold time referenced to RAS tRRH 0 0 ns 8 Write command hold time tWCH 10 10 ns Write command pulse width tWP 10 10 ns Write command to RAS lead time tRWL 13 15 ns Write command to CAS lead time tCWL 13 15 ns AC CHARACTERISTICS (0 °C≤TA≤70°C, See note 1,2) Test condition (3.3V device) : VCC=3.3V ±0.3V, Vih/Vil=2.2/0.7V, Voh/Vol=2.0/0.8V |
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