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KM44C4103C Datasheet(PDF) 5 Page - Samsung semiconductor |
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KM44C4103C Datasheet(HTML) 5 Page - Samsung semiconductor |
5 / 20 page CMOS DRAM KM44C4003C, KM44C4103C CAPACITANCE (TA=25 °C, VCC=5V, f=1MHz) Parameter Symbol Min Max Units Input capacitance [A0 ~ A11] CIN1 - 5 pF Input capacitance [RAS, CASx, W, OE] CIN2 - 7 pF Output capacitance [DQ0 - DQ3] CDQ - 7 pF Test condition : VCC=5.0V ±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V Parameter Symbol -5 -6 Units Notes Min Max Min Max Random read or write cycle time tRC 90 110 ns Read-modify-write cycle time tRWC 133 155 ns Access time from RAS tRAC 50 60 ns 3,4,10 Access time from CAS tCAC 13 15 ns 3,4,5,18 Access time from column address tAA 25 30 ns 3,10 CAS to output in Low-Z tCLZ 0 0 ns 3,18 Output buffer turn-off delay tOFF 0 13 0 15 ns 6 Transition time (rise and fall) tT 3 50 3 50 ns 2 RAS precharge time tRP 30 40 ns RAS pulse width tRAS 50 10K 60 10K ns RAS hold time tRSH 13 15 ns 14 CAS hold time tCSH 50 60 ns 17 CAS pulse width tCAS 13 10K 15 10K ns 23 RAS to CAS delay time tRCD 20 37 20 45 ns 4,16 RAS to column address delay time tRAD 15 25 15 30 ns 10 CAS to RAS precharge time tCRP 5 5 ns 15 Row address set-up time tASR 0 0 ns Row address hold time tRAH 10 10 ns Column address set-up time tASC 0 0 ns 16 Column address hold time tCAH 10 10 ns 16 Column address to RAS lead time tRAL 25 30 ns Read command set-up time tRCS 0 0 ns Read command hold time referenced to tRCH 0 0 ns 8,15 Read command hold time referenced to tRRH 0 0 ns 8 Write command hold time tWCH 10 10 ns 14 Write command pulse width tWP 10 10 ns Write command to RAS lead time tRWL 13 15 ns Write command to CAS lead time tCWL 13 15 ns 17 AC CHARACTERISTICS (0 °C≤TA≤70°C, See note 1,2) |
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