S1T3361D01-D0B0 datasheet(3/6 Pages) SAMSUNG

Part #	S1T3361D01-D0B0

Description	LOW VOLTAGE/POWER NARROW BAND FM IF

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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LOW VOLTAGE/POWER NARROW BAND FM IF

S1T3361D

3

ELECTRICAL CHARACTERISTICS

(VCC = 4.0V, fo = 10.7MHz, ∆f = ± 3kHz, fMOD = 1kHz, Ta = 25°C, unless otherwise specified)

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Operating Current

ICC

Squelch off (V12 = 2V)

Squelch on (V12 = GND)

2.0

3.0

4.0

6.0

8.0

10

mA

Input Limiting Voltage

VI (LIM)

-3.0dB limiting

−

2.0

6.0

µV

Detector Output Voltage

VO (DET)

−

2.0

−

Vdc

Detector Output Impedance

ZO (DET)

−

400

−

W

Recoverd audio output voltage

VO

Vin = 10mV

134

150

168

mVrms

Filter Gain

GV

f = 10kHz, Vin = 5mV

40

48

52

dB

Filter Output DC Voltage

VO (DC)

−

1.0

1.5

2.0

Vdc

Trigger Hysteresis of Filter

VTH

−

50

−

mV

Mute Switch-on Resistance

RON (MUTE)

Mute Low

−

10

40

Ω

Mute Switch-off Resistance

ROFF(MUTE)

Mute High

1

-

10

M

Ω

Scan Control Low Output

VL (SCAN)

Mute off (V12 = 2V)

−

0.5

Vdc

Scan Control High Output

VH (SCAN)

Mute on (V12 = GND)

3.0

−

Vdc

Mixer Conversion Gain

GV (MIXER)

−

30

36

−

dB

Mixer Input Resistance

RI (MIXER)

−

3.3

−

k

Ω

Mixer Input Capacitance

CI (MIXER)

−

2.2

−

pF

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S1T3361D01-D0B0 Datasheet(PDF) 3 Page - Samsung semiconductor

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