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S1T8501 Datasheet(PDF) 3 Page - Samsung semiconductor |
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S1T8501 Datasheet(HTML) 3 Page - Samsung semiconductor |
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3 / 6 page  SPEECH NETWORK WITH DIALER INTERFACE S1T8501 3 ELECTRICAL CHARACTERISTICS (TA = 25 °C) Characteristic Symbol Test Conditions Min. Typ. Max. Unit Line Voltage VL Ta = 25 °C IL = 12mA 3.9 − 4.7 V IL = 20mA − − 5.5 IL = 80mA − − 12.2 Common Mode Rejection Ratio CMRR f = 1kHz, IL = 12 to 80mA 50 − − dB Line Matching Impedance ZL VRI = 0.3V, IL = 12 to 80mA f = 1kHz 500 600 700 Ω TX Gain GV (TX) Ta = 25 °C f = 1kHz VMI = 2mV IL = 25mA 48 49 50 dB IL = 52mA 44 45 46 IL = 25 to 52mA 48 49 50 TX Gain Flatness ∆ G V (TX) VMI = 2mV, fref = 1kHz, IL = 12 to 80mA − − ± 1 dB TX Distortion THD TX f = 1kHz IL = 16 to 80mA VSO = 1V − − 2 % VSO = 1.3V − − 10 TX Noise VNO (TX) VMI = 0V, IL = 40mA − − −70 dBm Side Tone GV (ST) Ta = 25 °C, f= 1kHz, I L = 25 to 52mA − − 36 dB MIC Input Impedance ZI (MIC) VMI = 2mV, IL = 12 to 80mA 40 − − k Ω Tx Loss in MF Operation GV (LOSS) VMI =2mV IL = 25mA −30 − − dB IL = 52mA −30 − − RX Gain GV (RX) Ta = 25 °C VRI = 0.3V f = 1kHz IL = 25mA 7 8 9 dB IL = 52mA 2.5 3.5 4.5 IL = 25 to 52mA 7 8 9 RX Gain Flatness ∆G V (RX) VRI = 0.3V, fref = 1kHz, IL = 12 to 80mA − − ± 1 dB RX Distortion THDRX f =1kHz IL = 12mA VRO = 1.6V − − 2 % VRO = 1.9V − − 10 IL = 50mA VRO = 1.8V − − 2 VRO = 2.1V − − 10 RX Noise VNO (RX) VRI = 0V, IL = 12 to 80mA − − 100 µV RX Output Impedance RO (RX) VRO = 50mV, IL = 40mA − − 100 Ω MF Supply Voltage VDD (MF) IL = 12 to 80mA 2.4 2.5 − V MF Supply Current Standby ISB (MF) IL = 12 to 80mA 0.5 − − mA Operation IDD (MF) 2 − − MF Amplifier Gain GV (MF) IL = 12 to 80mA fMF = 1kHz,VMF = 80mV 15 − 17 dB DC Input Voltage Level (pin 14) VI (MF) VMF = 80mV − 0.3VDD − V Input Impedance (pin 14) ZI (MF) VMF = 80mV 40 − − k Ω Distortion THD MF VMF = 110mV, IL = 12 to 80mA − − 2 % |
Similar Part No. - S1T8501 |
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Similar Description - S1T8501 |
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