S5T8557B01-S0B0 datasheet(3/14 Pages) SAMSUNG

Part #	S5T8557B01-S0B0

Description	1 CHIP CODEC

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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1 CHIP CODEC

S5T8554B/7B

3

ABSOLUTE MAXIMUM RATING

ELECTRICAL CHARACTERISTICS

(Unless otherwise noted, VCC = 5.0V ± 5%, VBB = −5.0V ± 5%, GNDA = 0V, Ta = 0°C to 70°C;

typical characteristics specified at VCC = 5.0V, VBB = −5.0V, Ta=25°C; all signals referenced to GNDA)

Characteristic

Symbol

Value

Unit

Positive Supply Voltage

VCC

7

V

Negative Supply Voltage

VBB

−7

V

Voltage at Any Analog Input or Output

VI (A)

VCC + 0.3 ~ VBB - 0.3

V

Voltage at Any Digital Input or Output

VI (D)

VCC + 0.3 ~ GNDA - 0.3

V

Operating Temperature Range

Ta

−25 ~ +125

°C

Storage Temperature Range

TSTG

−65 ~ +150

°C

Lead Temperature (Soldering, 10 secs)

TLEAD

300

°C

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

POWER DISSIPATION

Power-Down Current

ICC (DOWN) No Load

−

0.5

1.5

mA

Power-Down Current

IBB (DOWN) No Load

−

0.05

0.3

mA

Active Current

ICC (A)

No Load

−

6.0

9.0

mA

Active Current

IBB (A)

No Load

−

6.0

9.0

mA

DIGITAL INTERFACE

Input Low Voltage

VIL

−

0.6

V

Input High Voltage

VIH

−

2.2

−

V

Input Low Current

IIL

GNDA≤ VIN ≤ VIL, all digital input

−10

−

10

µA

Input High Current

IIH

VIH ≤ VIN ≤ VCC

−10

−

10

µA

Output Low Voltage

VOL

DX, IL = 3.2mA

SIGR, IL = 1.0mA

TSX, IL = 3.2mA, open drain

−

0.4

V

Output High Voltage

IO (HZ)

DX, IH = −3.2mA

SIGR, IH = −1.0mA

2.4

−

V

Output Current in High

Impedance State (Tri -state)

IO (HZ)

DX, GNDA ≤ VO ≤ VCC

−10

−

10

µA

ANALOG INTERFACE WITH RECEIVE FILTER

Output Resistance

RO

Pin VFRO

−

1

3

Ω

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