Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

K4C560838C-TCD4 Datasheet(PDF) 10 Page - Samsung semiconductor

Part # K4C560838C-TCD4
Description  256Mb Network-DRAM
Download  42 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K4C560838C-TCD4 Datasheet(HTML) 10 Page - Samsung semiconductor

Back Button K4C560838C-TCD4 Datasheet HTML 6Page - Samsung semiconductor K4C560838C-TCD4 Datasheet HTML 7Page - Samsung semiconductor K4C560838C-TCD4 Datasheet HTML 8Page - Samsung semiconductor K4C560838C-TCD4 Datasheet HTML 9Page - Samsung semiconductor K4C560838C-TCD4 Datasheet HTML 10Page - Samsung semiconductor K4C560838C-TCD4 Datasheet HTML 11Page - Samsung semiconductor K4C560838C-TCD4 Datasheet HTML 12Page - Samsung semiconductor K4C560838C-TCD4 Datasheet HTML 13Page - Samsung semiconductor K4C560838C-TCD4 Datasheet HTML 14Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 10 / 42 page
background image
K4C5608/1638C
256Mb Network-DRAM
REV. 0.7 Aug. 2003
- 10 -
DC Characteristics and Operating Conditions (Vdd, VddQ = 2.5V ± 0.15V, Ta = 0~70×°C)
Notes : 1. These parameters depend on the cycle rate and these values are measured at a cycle rate with the minimum values of tCK, tRC and IRC.
2. These parameters depend on the output loading. The specified values are obtained with the output open.
3. Refer to output driver characteristics for the detail. Output Driver Strength is selected by Extended Mode Register.
Item
Symbol
Max
Units
Notes
D4(400Mbps) DA(366Mbps) D3(333Mbps)
Operating Current
tCK = min, IRC=min
Read/Write command cycling
OV<=VIN<=VIL(AC) (max.) VIH(AC)(min.) <=VIN<=VddQ
1 bank operation, Burst Length = 4
Address change up to 2 times during minimum IRC.
IDD1S
310
300
290
mA
1, 2
Standby Current
tCK=min, CS = VIH, PD = VIH,
0V<=VIN<=VIL(AC)(max.) VIH(AC)(min.)<=VIH<=VddQ
All Banks : inactive state
Other input signals are changed one time during 4*tCK
IDD2N
85
85
80
1
Standby (Power Down) Current
tCK=min, CS = VIH, PD = VIL (Power Down)
0V<=VIN<=VddQ
All Banks : inactive state
IDD2P
22
2
1
Auto-Refresh Current
tCK = min, IREFC= min, tREFI = min
Auto-Refresh command cycling
0V<=VIN<=VIL(AC) (max.), VIH(AC) (min.) <=VIN<=VddQ
Address change up to 2 times during minimum IREFC.
IDD5
105
100
95
1
Self-Refresh Current
self-Refresh mode
PD = 0.2V, OV<=VIN<=VddQ
IDD6
33
3
Item
Symbol
Min
Max
Unit
Notes
Input Leakage Current
(0V<=VIN<=VddQ, All other pins not under test = 0V)
ILI
-5
5
uA
Output Leakage Current
(Output disabled, 0V<=VOUT<=VddQ)
ILO
-5
5
uA
VREF Current
IREF
-5
5
uA
Normal Output Driver
Output Source DC Current
VOH = VddQ - 0.4V
IOH(DC)
-10
-
mA
3
Output Sink DC Current
VOL=0.4V
IOL(DC)
10
-
3
Strong Output Driver
Output Source DC Current
VOH = VddQ - 0.4V
IOH(DC)
-11
-
3
Output Sink DC Current
VOL=0.4V
IOL(DC)
11
-
3
Weaker Output Driver
Output Source DC Current
VOH = VddQ - 0.4V
IOH(DC)
-8
-
3
Output Sink DC Current
VOL=0.4V
IOL(DC)
8-
3
Weakest Output Driver
Output Source DC Current
VOH = VddQ - 0.4V
IOH(DC)
-7
-
3
Output Sink DC Current
VOL=0.4V
IOL(DC)
7-
3


Similar Part No. - K4C560838C-TCD4

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
K4C89083AF-ACF5 SAMSUNG-K4C89083AF-ACF5 Datasheet
1Mb / 55P
   288Mb x18 Network-DRAM2 Specification
K4C89083AF-ACF6 SAMSUNG-K4C89083AF-ACF6 Datasheet
1Mb / 55P
   288Mb x18 Network-DRAM2 Specification
K4C89083AF-ACFB SAMSUNG-K4C89083AF-ACFB Datasheet
1Mb / 55P
   288Mb x18 Network-DRAM2 Specification
K4C89083AF-AIF5 SAMSUNG-K4C89083AF-AIF5 Datasheet
1Mb / 55P
   288Mb x18 Network-DRAM2 Specification
K4C89083AF-AIF6 SAMSUNG-K4C89083AF-AIF6 Datasheet
1Mb / 55P
   288Mb x18 Network-DRAM2 Specification
More results

Similar Description - K4C560838C-TCD4

ManufacturerPart #DatasheetDescription
logo
List of Unclassifed Man...
NT5SV64M4AT ETC1-NT5SV64M4AT Datasheet
817Kb / 65P
   256Mb Synchronous DRAM
logo
Integrated Silicon Solu...
IS42S83200J ISSI-IS42S83200J Datasheet
1Mb / 63P
   256Mb SYNCHRONOUS DRAM
IS42S32800G ISSI-IS42S32800G Datasheet
1,009Kb / 58P
   256Mb SYNCHRONOUS DRAM
IS43DR32801B ISSI-IS43DR32801B Datasheet
999Kb / 44P
   256Mb DDR2 DRAM
IS43DR32800A ISSI-IS43DR32800A Datasheet
913Kb / 41P
   256Mb DDR2 DRAM
logo
Eorex Corporation
EM488M3244VTB EOREX-EM488M3244VTB Datasheet
685Kb / 17P
   256Mb (2M횞4Bank횞32) Synchronous DRAM
EM488M3244VBA EOREX-EM488M3244VBA Datasheet
203Kb / 17P
   256Mb (2M쨈4Bank쨈32) Synchronous DRAM
EM48AM1684VBB EOREX-EM48AM1684VBB Datasheet
669Kb / 17P
   256Mb (4M횞4Bank횞16) Synchronous DRAM
EM48AM1684LBA EOREX-EM48AM1684LBA Datasheet
650Kb / 17P
   256Mb (4M횞4Bank횞16) Synchronous DRAM
EM48AM1684VTE EOREX-EM48AM1684VTE Datasheet
222Kb / 19P
   256Mb (4M횞4Bank횞16) Synchronous DRAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com