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2SA1875 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SA1875 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 5 page 2SA1875 / 2SC4976 No.5507-1/5 Features • High fT : fT=400MHz(typ). • High breakdown voltage : VCEO≥200V(min). • Large current capacitance. • Small reverse transfer capacitance and excellent high -frequency characteristic : Cre=3.4pF(NPN), 4.2pF(PNP). • Adoption of FBET process. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN5507B 2SA1875 / 2SC4976 High-Definition CRT Display Video Output Applications 52101 TS IM TA-9766 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP / NPN Epitaxial Planar Silicon Transistors Package Dimensions unit : mm 2045B unit : mm 2044B [2SA1875 / 2SC4976] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP 5.0 6.5 0.85 0.7 0.6 0.5 1.2 2.3 0.5 1 23 4 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 6.5 2.3 0.5 5.0 0.85 0.5 1.2 0 to 0.2 2.3 2.3 0.6 12 4 3 [2SA1875 / 2SC4976] |
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