2SC4673

Ordering number : EN3927

UHF Low-Noise Amp, Wide-Band Amp

Applications

NPN Epitaxial Planar Silicon Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN

11697YK (KOTO) 8-6790 No.3927-1/4

Package Dimensions

unit: mm

2038-PCP

[2SC4673]

E : Emitter

C : Collector

B : Base

SANYO : PCP

Specifications

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

20

V

Collector-to-Emitter Voltage

VCEO

12

V

Emitter-to-Base Voltage

VEBO

3V

Collector Current

IC

100

mA

Base Current

IB

30

mA

Collector Dissipation

PC

400

mW

Mounted on ceramic board

800

mW

(250mm

2

×0.8mm)

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Parameter

Symbol

Conditions

Ratings

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=12V, IE=0

1.0

µA

Emitter Cutoff Current

IEBO

VEB=2V, IC=0

10

µA

DC Current Gain

hFE

VCE=10V, IC=20mA

40*

200*

Gain-Bandwidth Product

fT

VCE=10V, IC=20mA

4.5

GHz

Output Capacitance

Cob

VCB=10V, f=1MHz

1.1

pF

Reverse Transfer Capacitance

Cre

VCB=10V, f=1MHz

0.75

pF

Forward Transfer Gain

VCE=10V, IC=20mA, f=0.9GHz

8.0

dB

Noise Figure

NF

VCE=10V, IC=5mA, f=0.9GHz

1.5

3.0

dB

* : The 2SC4673 is classified by 20mA hFE as follows :

Making : CD

hFE rank : C, D, E

Features

• Low noise figure : NF=1.5dB typ (f=0.9GHz).

• High power gain :

• High cutoff frequency : fT=4.5GHz typ.

40

C

80

60

D

120

100

E

200