ABSOLUTE MAXIMUM RATINGS

(1)

POWER DISSIPATION RATINGS

THERMAL CHARACTERISTICS

KEY ATTRIBUTES

SN65ELT20

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

PARAMETER

CONDITIONS

VALUE

UNIT

Absolute PECL-mode supply voltage

6

V

6

V

Continuous

50

mA

Output current

Surge

100

mA

Operating temperature range

–40 to 85

°C

Storage temperature range

–65 to 150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

POWER RATING

THERMAL RESISTANCE,

DERATING FACTOR

POWER RATING

CIRCUIT-BOARD

JUNCTION-TO-AMBIENT,

PACKAGE

MODEL

NO AIRFLOW

(mW)

(mW/°C)

(mW)

Low-K

719

139

7

288

SOIC

High-K

840

119

8

336

Low-K

469

213

5

188

SOIC-TSSOP

High-K

527

189

5

211

PARAMETER

PACKAGE

VALUE

UNIT

SOIC

79

θ

JB

Junction-to-board thermal resistance

°C/W

SOIC-TSSOP

120

SOIC

98

θ

JC

Junction-to-case thermal resistance

°C/W

SOIC-TSSOP

74

CHARACTERISTIC

VALUE

SO-8: Level 1

Moisture sensitivity level

TSSOP-8: Level 3

Flammability rating (oxygen index: 28 to 34)

UL 94 V-0 at 0.125 in

ESD—human body model

>4 kV

ESD—machine model

200 V

ESD—charged-device model

2 kV

Meets or exceeds JEDEC Spec EIA/JESD78 latchup test

2

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