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AUIRFZ44Z Datasheet(PDF) 1 Page - International Rectifier |
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AUIRFZ44Z Datasheet(HTML) 1 Page - International Rectifier |
1 / 14 page www.irf.com 1 AUIRFZ44Z AUIRFZ44ZS HEXFET® Power MOSFET AUTOMOTIVE GRADE PD - 97543 Features ● Advanced Process Technology ● Ultra Low On-Resistance ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other appli- cations. 07/23/2010 HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. GD S Gate Drain Source D2Pak AUIRFZ44ZS S D G D TO-220AB AUIRFZ44Z S D G D S D G V(BR)DSS 55V RDS(on) max. 13.9mΩ ID 51A Parameter Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (See Fig. 9) IDM Pulsed Drain Current c PD @TC = 25°C Maximum Power Dissipation W Linear Derating Factor W/°C VGS Gate-to-Source Voltage V EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ EAS (tested) Single Pulse Avalanche Energy Tested Value i IAR Avalanche Current c A EAR Repetitive Avalanche Energy h mJ TJ Operating Junction and °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter Typ. Max. Units RθJC Junction-to-Case k ––– 1.87 °C/W RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– RθJA Junction-to-Ambient ––– 62 RθJA Junction-to-Ambient (PCB Mount, steady state) j ––– 40 Max. 51 36 200 10 lbf•in (1.1N•m) 80 0.53 ± 20 86 105 See Fig.12a,12b,15,16 300 -55 to + 175 |
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