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SG50N06T Datasheet(PDF) 2 Page - Sirectifier Global Corp. |
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SG50N06T Datasheet(HTML) 2 Page - Sirectifier Global Corp. |
2 / 2 page SG50N06T, SG50N06DT Discrete IGBTs Symbol Test Conditions Unit min. typ. max. gts IC=IC90; VCE=10V 25 35 S Pulse test, t 300us, duty cycle 2% Cies 4000 Coes VCE=25V; VGE=0V; f=1MHz 340 pF Cres 100 Qg 110 Qge IC=IC90; VGE=15V; VCE=0.5VCES 30 nC Qgc 40 td(on) Inductive load, TJ=25 oC 50 ns tri IC=IC90; VGE=15V 50 ns VCE=0.8VCES; RG=Roff=2.7 td(off) Remarks:Switching times may increase 200 300 ns tfi for VCE(Clamp) 0.8VCES' higher TJ or 150 270 ns Eoff increased RG 3.0 6.0 mJ td(on) Inductive load, TJ=25 oC 50 ns tri IC=IC90; VGE=15V 50 ns Eon VCE=0.8VCES; RG=Roff=2.7 2 mJ td(off) Remarks:Switching times may increase 280 ns tfi for VCE(Clamp) 0.8VCES' higher TJ or 250 ns Eoff increased RG 4.2 mJ RthJC 0.62 K/W RthCK 0.25 K/W (TJ=25 oC, unless otherwise specified) Characteristic Values Reverse Diode (FRED) Symbol Test Conditions Unit min. typ. max. VF IF=IC90; VGE=0V; V Pulse test; t 300ms, duty cycle 22% 2.5 IRM IF=IC90; VGE=0V; -diF/dt=100A/ms VR=100V; 2 2.5 A trr IF=1A; -di/dt=200A/ms; VR=30V 35 ns RthJC 0.65 K/W Characteristic Values (TJ=25 oC, unless otherwise specified) 180 50 100 175 50 ns |
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