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2SC5504 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SC5504 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 6 page Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier Applications Ordering number:ENN6223 2SC5504 SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN O1899TS (KOTO) TA-1703 No.6223–1/6 0.65 0.65 0.5 0.65 0.6 0.3 0.15 0 to 0.1 2.0 1 2 3 4 Specifications Absolute Maximum Ratings at Ta = 25˚C Package Dimensions unit:mm 2161 [2SC5504] Features · Low noise : NF=0.9dB typ (f=1GHz). : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1GHz). · High cutoff frequency : fT=11GHz typ. · Low voltage, low current operation. (VCE=1V, IC=1mA) : fT=7GHz typ. : S21e2=6dB typ (f=1.5GHz). ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Emitter 2 : Collector 3 : Emitter 4 : Base SANYO : MCP4 * : The 2SC5504 is classified by 10mA hFE as follows : Continued on next page. r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 2V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 1V e g a t l o V e s a B - o t - r e t t i m EV O B E 5 . 1V t n e r r u C r o t c e ll o CIC 0 3A m n o i t a p i s s i D r o t c e ll o CPC m m 0 5 2 ( d r a o b c i m a r e c a n o d e t n u o M 2 × ) m m 8 . 00 0 3W m e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 1 = E 0 =0 . 1A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 1 = C 0 =0 1A µ n i a G t n e r r u C C D h E F V E C I , V 5 = C A m 0 1 = * 0 9* 0 7 2 t c u d o r P h t d i w d n a B - n i a G fT1V E C I , V 5 = C A m 0 1 = 81 1z H G fT2V E C I , V 1 = C A m 1 = 7z H G e c n a t i c a p a C t u p t u Ob o CV B C z H M 1 = f , V 0 1 = 5 4 . 07 . 0F p e c n a t i c a p a C r e f s n a r T e s r e v e Re r CV B C z H M 1 = f , V 0 1 = 5 2 . 0F p g n i k r a MN M k n a R4 5 h E F 0 8 1 o t 0 90 7 2 o t 5 3 1 |
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