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ADG5409 Datasheet(PDF) 4 Page - Analog Devices

Part # ADG5409
Description  High Voltage Latch-Up Proof, 4-/8-Channel Multiplexers
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Manufacturer  AD [Analog Devices]
Direct Link  http://www.analog.com
Logo AD - Analog Devices

ADG5409 Datasheet(HTML) 4 Page - Analog Devices

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ADG5408/ADG5409
Rev. 0 | Page 4 of 24
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
CD (On), CS (On)
ADG5408
133
pF typ
VS = 0 V, f = 1 MHz
ADG5409
81
pF typ
VS = 0 V, f = 1 MHz
POWER REQUIREMENTS
VDD = +16.5 V, VSS = −16.5 V
IDD
45
μA typ
Digital inputs = 0 V or VDD
55
70
μA max
ISS
0.001
μA typ
Digital inputs = 0 V or VDD
1
μA max
VDD/VSS
±9/±22
V min/V max
GND = 0 V
1 Guaranteed by design; not subject to production test.
±20 V DUAL SUPPLY
VDD = +20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, unless otherwise noted.
Table 2.
Parameter
25°C
−40°C to +85°C
−40°C to +125°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
VDD to VSS
V
On Resistance, RON
12.5
Ω typ
VS = ±15 V, IS = −10 mA; see Figure 26
14
17
21
Ω max
VDD = +18 V, VSS = −18 V
On-Resistance Match Between
Channels, ∆RON
0.3
Ω typ
VS = ±15 V, IS = −10 mA
0.8
1.3
1.4
Ω max
On-Resistance Flatness, RFLAT (ON)
2.3
Ω typ
VS = ±15 V, IS = −10 mA
2.7
3.1
3.5
Ω max
LEAKAGE CURRENTS
VDD = +22 V, VSS = −22 V
Source Off Leakage, IS (Off )
±0.1
nA typ
VS = ±15 V, VD =
m15 V; see Figure 29
±0.25
±1
±7
nA max
Drain Off Leakage, ID (Off )
±0.15
nA typ
VS = ±15 V, VD =
m15 V; see Figure 29
±0.4
±4
±30
nA max
Channel On Leakage, ID (On), IS (On)
±0.15
nA typ
VS = VD = ±15 V; see Figure 25
±0.4
±4
±30
nA max
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current, IINL or IINH
0.002
μA typ
VIN = VGND or VDD
±0.1
μA max
Digital Input Capacitance, CIN
3
pF typ
DYNAMIC CHARACTERISTICS1
Transition Time, tTRANSITION
160
ns typ
RL = 300 Ω, CL = 35 pF
207
237
262
ns max
VS = 10 V; see Figure 32
tON (EN)
140
ns typ
RL = 300 Ω, CL = 35 pF
165
194
218
ns max
VS = 10 V; see Figure 34
tOFF (EN)
133
ns typ
RL = 300 Ω, CL = 35 pF
153
174
189
ns max
VS = 10 V; see Figure 34
Break-Before-Make Time Delay, tD
38
ns typ
RL = 300 Ω, CL = 35 pF
11
ns min
VS1 = VS2 = 10 V; see Figure 33
Charge Injection, QINJ
155
pC typ
VS = 0 V, RS = 0 Ω, CL = 1 nF; see
Figure 35
Off Isolation
−60
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see
Figure 28
Channel-to-Channel Crosstalk
−60
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz;
see Figure 27


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