VDD181MNNA datasheet(6/22 Pages) ETC2

Part #	VDD181MNNA

Description	CMOS

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AnaSem Inc.

5

Rev. C09-09

VDD 系列

低电压

, 低功耗, ±1% 高精度电压检测内置延迟电路 CMOS 电压检测器

.......... Future of the analog world

电子规格

(Ta=25°C 除非另有注明)

项目

符号

条件

最低

一般

最高

单位

测试

电路

工作电压范围

VIN

VDET = 1.8V ~ 6.0V

0.7

-

6.0

V

1

检测电压

VDET

VDET = 1.8V ~ 6.0V

Ta = –40°C ~ +85°C

VDET

×0.99

VDET

×1.01

V

1

滯後现象范围

VHYS

VDET

×0.02

VDET

×0.05

VDET

×0.08

V

1

VIN=0.7V

0.1

0.35

-

mA

VIN=1.0V

1.0

2.3

-

mA

VIN=2.0V

3.0

8.2

-

mA

VIN=3.0V

5.0

11.1

-

mA

VIN=4.0V

6.0

12.8

-

mA

N-ch

VDS=0.5V

VIN=5.0V

7.0

13.8

-

mA

3

CMOS P-ch

VDS=2.1V

VIN=6.0V

-

-9.5

-1.5

mA

4

输出电流

IOUT

CMOS N-ch

VDS=2.1V

VIN=6.0V

1.5

9.5

-

mA

3

VIN=1.5V

-

0.6

2.1

μA

VIN=2.0V

-

0.7

2.5

μA

VIN=3.0V

-

0.8

2.8

μA

VIN=4.0V

-

0.9

3.0

μA

电流功耗

ISS

VIN=5.0V

-

1.0

3.4

μA

2

流失电流

ILEAK

VIN=6.0V VOUT=6.0V

-

10

100

nA

3

电压检测温度特征

∆VDET /

∆Ta•VDET

VDET = 1.8V ~ 6.0V

Ta = –40°C ~ +85°C

-

±20

-

ppm/°C

1

10

-

50

ms

50

-

200

ms

延迟时间

VDR→VOUT inversion

TDLY

VIN = 0.7V ~ 6.0V

80

-

400

ms

5

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