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2SD669A Datasheet(PDF) 3 Page - Unisonic Technologies |
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2SD669A Datasheet(HTML) 3 Page - Unisonic Technologies |
3 / 4 page 2SD669/A NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 3 of 4 www.unisonic.com.tw QW-R204-005,H TYPICAL CHARACTERISTICS Ta=7 5°C 25 -20 VCE=5V 1 50 10 0 15 0 20 0 25 0 30 0 1 3 10 30 100 300 1000 3000 Collector Current, IC (mA) DC Current Transfer Ratio vs. Collector Current Collector to Emitter Saturation Voltage vs. Collector Current 1 3 10 30 100 300 1000 Collector Current, IC (mA) 0 0.2 0.4 0.6 0.8 1.0 1.2 TC= 75° C IC=10 IB -20 TC=-2 0°C IC=10IB 25 75 1 3 10 30 100 300 1,000 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector Current, IC (mA) Base to Emitter Saturation Voltage vs. Collector Current 10 30 100 300 1,000 Collector Current, IC (mA) 0 40 80 120 160 200 240 Gain Bandwidth Product vs. Collector Current VCE=5V Ta=25°C 1 510 50 20 100 2 2 5 10 20 50 100 200 Collector to Base Voltage, VCB (V) Collector Output Capacitance vs. Collector to Base Voltage f=1MHz IE=0 DC Operation (TC=25°C) (13.3V, 1.5A) 40V, 0.5A (120V, 0.04A) (160V, 0.02A) 2SD669 2SD669A Area of Safe Operation Collector to Emitter Voltage, VCE (V) 13 10 100 300 0.01 0.03 0.1 0.3 1.0 3 30 |
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