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SST25VF020B-80-4C-QAE Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST25VF020B-80-4C-QAE Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
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1 / 33 page  ©2010 Silicon Storage Technology, Inc. S71417-02-000 04/10 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Data Sheet FEATURES: • Single Voltage Read and Write Operations – 2.7-3.6V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • High Speed Clock Frequency – Up to 80 MHz • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Low Power Consumption: – Active Read Current: 10 mA (typical) – Standby Current: 5 µA (typical) • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks • Fast Erase and Byte-Program: – Chip-Erase Time: 35 ms (typical) – Sector-/Block-Erase Time: 18 ms (typical) – Byte-Program Time: 7 µs (typical) • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations • End-of-Write Detection – Software polling the BUSY bit in Status Register – Busy Status readout on SO pin in AAI Mode • Hold Pin (HOLD#) – Suspends a serial sequence to the memory without deselecting the device • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register • Software Write Protection – Write protection through Block-Protection bits in status register • Temperature Range – Commercial: 0°C to +70°C – Industrial: -40°C to +85°C • Packages Available – 8-lead SOIC (150 mils) – 8-contact WSON (6mm x 5mm) • All non-Pb (lead-free) devices are RoHS compliant PRODUCT DESCRIPTION The 25 series Serial Flash family features a four-wire, SPI- compatible interface that allows for a low pin-count pack- age which occupies less board space and ultimately lowers total system costs. The SST25VF020B devices are enhanced with improved operating frequency and even lower power consumption. SST25VF020B SPI serial flash memories are manufactured with SST proprietary, high- performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF020B devices significantly improve perfor- mance and reliability, while lowering power consumption. The devices write (Program or Erase) with a single power supply of 2.7-3.6V for SST25VF020B. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25VF020B device is offered in 8-lead SOIC (150 mils) and 8-contact WSON (6mm x 5mm) packages. See Figure 2 for pin assignments. 2 Mbit SPI Serial Flash SST25VF020B SST25VF040B4Mb Serial Peripheral Interface (SPI) flash memory |
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