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SST25WF080-75-4I-ZAF Datasheet(PDF) 1 Page - Silicon Storage Technology, Inc |
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SST25WF080-75-4I-ZAF Datasheet(HTML) 1 Page - Silicon Storage Technology, Inc |
1 / 29 page ©2010 Silicon Storage Technology, Inc. S71203-03-000 04/10 1 The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc. These specifications are subject to change without notice. Advance Information FEATURES: • Single Voltage Read and Write Operations – 1.65-1.95V • Serial Interface Architecture – SPI Compatible: Mode 0 and Mode 3 • High Speed Clock Frequency –75 MHz • Superior Reliability – Endurance: 100,000 Cycles (typical) – Greater than 100 years Data Retention • Ultra-Low Power Consumption: – Active Read Current: 2 mA (typical @ 33 MHz) – Standby Current: 5 µA (typical) • Flexible Erase Capability – Uniform 4 KByte sectors – Uniform 32 KByte overlay blocks – Uniform 64 KByte overlay blocks • Fast Erase and Byte-Program: – Chip-Erase Time: 35 ms (typical) – Sector-/Block-Erase Time: 18 ms (typical) – Byte-Program Time: 14 µS (typical) • Auto Address Increment (AAI) Programming – Decrease total chip programming time over Byte-Program operations • End-of-Write Detection – Software polling the BUSY bit in Status Register – Busy Status readout on SO pin • Reset Pin (RST#) or Programmable Hold Pin (HOLD#) option – Hardware Reset pin as default – Hold pin option to suspend a serial sequence without deselecting the device • Write Protection (WP#) – Enables/Disables the Lock-Down function of the status register • Software Write Protection – Write protection through Block-Protection bits in status register • Temperature Range – Industrial: -40°C to +85°C • Packages Available – 8-lead SOIC (150 mils) –8-bump XFBGA • All devices are RoHS compliant PRODUCT DESCRIPTION The SST25WF080 is a member of the Serial Flash 25 Series family and features a four-wire, SPI-compatible interface that allows for a low pin-count package which occupies less board space and ultimately lowers total sys- tem costs. SST25WF080 SPI serial flash memory is manu- factured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST25WF080 significantly improves performance and reliability, while lowering power consumption. The device writes (Program or Erase) with a single power supply of 1.65-1.95V for SST25WF080. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the Super- Flash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. The SST25WF080 is offered in both an 8-lead, 150 mils SOIC package and an 8-bump XFBGA package. See Fig- ures 2 and 3 for the pin assignments. 8Mbit 1.8V SPI Serial Flash SST25WF080 SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory |
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