©2010 Silicon Storage Technology, Inc.

S71203-03-000

04/10

1

The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

Advance Information

FEATURES:

•

Single Voltage Read and Write Operations

– 1.65-1.95V

•

Serial Interface Architecture

– SPI Compatible: Mode 0 and Mode 3

•

High Speed Clock Frequency

–75 MHz

•

Superior Reliability

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

•

Ultra-Low Power Consumption:

– Active Read Current: 2 mA (typical @ 33 MHz)

– Standby Current: 5 µA (typical)

•

Flexible Erase Capability

– Uniform 4 KByte sectors

– Uniform 32 KByte overlay blocks

– Uniform 64 KByte overlay blocks

•

Fast Erase and Byte-Program:

– Chip-Erase Time: 35 ms (typical)

– Sector-/Block-Erase Time: 18 ms (typical)

– Byte-Program Time: 14 µS (typical)

•

Auto Address Increment (AAI) Programming

– Decrease total chip programming time over

Byte-Program operations

•

End-of-Write Detection

– Software polling the BUSY bit in Status Register

– Busy Status readout on SO pin

•

Reset Pin (RST#) or Programmable Hold Pin

(HOLD#) option

– Hardware Reset pin as default

– Hold pin option to suspend a serial sequence

without deselecting the device

•

Write Protection (WP#)

– Enables/Disables the Lock-Down function of the

status register

•

Software Write Protection

– Write protection through Block-Protection bits in

status register

•

Temperature Range

– Industrial: -40°C to +85°C

•

Packages Available

– 8-lead SOIC (150 mils)

–8-bump XFBGA

•

All devices are RoHS compliant

PRODUCT DESCRIPTION

The SST25WF080 is a member of the Serial Flash 25

Series family and features a four-wire, SPI-compatible

interface that allows for a low pin-count package which

occupies less board space and ultimately lowers total sys-

tem costs. SST25WF080 SPI serial flash memory is manu-

factured with SST proprietary, high-performance CMOS

SuperFlash technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

The SST25WF080 significantly improves performance and

reliability, while lowering power consumption. The device

writes (Program or Erase) with a single power supply of

1.65-1.95V for SST25WF080. The total energy consumed

is a function of the applied voltage, current, and time of

application. Since for any given voltage range, the Super-

Flash technology uses less current to program and has a

shorter erase time, the total energy consumed during any

Erase or Program operation is less than alternative flash

memory technologies.

The SST25WF080 is offered in both an 8-lead, 150 mils

SOIC package and an 8-bump XFBGA package. See Fig-

ures 2 and 3 for the pin assignments.

8Mbit 1.8V SPI Serial Flash

SST25WF080

SST25VF016B16Mb Serial Peripheral Interface (SPI) flash memory